Semiconductor power devices
Semiconductor power devices
- Author(s): Arun Kadavelugu ; Samir Hazra ; Sachin Madhusoodhanan ; Awneesh Tripathi ; Kasunaidu Vechalapu ; Ankan De ; Krishna Mainali ; Dhaval Patel ; Kamalesh Hatua ; Subhashish Bhattacharya
- DOI: 10.1049/PBPO074E_ch1
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In this chapter, the characteristics of high-voltage SiC IGBT, SiC MOSFET, SiC junction gate field-effect transistor (JFET), and low-voltage SiC MOSFET are discussed.
Chapter Contents:
Inspec keywords: power bipolar transistors; insulated gate bipolar transistors; wide band gap semiconductors; power MOSFET; silicon compounds; junction gate field effect transistors
Other keywords:
Subjects: Power semiconductor devices; Other field effect devices; Insulated gate field effect transistors; Bipolar transistors
- Book DOI: 10.1049/PBPO074E
- Chapter DOI: 10.1049/PBPO074E_ch1
- ISBN: 9781849198264
- e-ISBN: 9781849198271
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