Issue 40, 2023, Issue in Progress
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RSC Advances

Effect of trifluoroacetic acid on InP/ZnSe/ZnS quantum dots: mimicking the surface trap and their effects on the photophysical properties†

Young Mo Sung,a   Tae-Gon Kim,b   Dong-Jin Yun,a   Byeong Gyu Chae,a   Hyokeun Park,a   Hyo Sug Lee,a   Jung-Hwa Kim, ORCID logo a   Shinae Jun*b  and  Soohwan Sul ORCID logo *a  

* Corresponding authors

a Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, South Korea
E-mail: soohwan.sul@samsung.com

b Organic Materials Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, South Korea

Abstract

Understanding the precise effects of defects on the photophysical properties of quantum dots (QDs) is essential to their development with near-unity luminescence. Because of the complicated nature of defects in QDs, the origins and detailed roles of the defects still remain rarely understood. In this regard, we used detailed chemical analysis to investigate the effect of surface defects on the optical properties of InP/ZnSe/ZnS QDs by introducing shell defects through controlled trifluoroacetic acid (TFA) etching. TFA treatment on the InP/ZnSe/ZnS QDs partially removed the ZnS shell as well as ligands and reduced the quantum yield by generating energetically deep surface traps. The surface defects of QDs by TFA cause charged trap sites inducing an Auger recombination process with a rate of ca. 200 ps. Based on these results, we proposed possible trap-assisted non-radiative decay pathways between the band-edge state and surface deep traps in InP/ZnSe/ZnS QDs.

Graphical abstract: Effect of trifluoroacetic acid on InP/ZnSe/ZnS quantum dots: mimicking the surface trap and their effects on the photophysical properties

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Article information

DOI
https://doi.org/10.1039/D3RA05441A
Article type
Paper
Submitted
11 Aug 2023
Accepted
18 Sep 2023
First published
25 Sep 2023
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2023,13, 28160-28164

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Effect of trifluoroacetic acid on InP/ZnSe/ZnS quantum dots: mimicking the surface trap and their effects on the photophysical properties

Y. M. Sung, T. Kim, D. Yun, B. G. Chae, H. Park, H. S. Lee, J. Kim, S. Jun and S. Sul, RSC Adv., 2023, 13, 28160 DOI: 10.1039/D3RA05441A

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