Structural, microstructure, dielectric relaxation, and AC conduction studies of perovskite SrSnO3 and Ruddlesden–Popper oxide Sr2SnO4†
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Abstract
Here, we report a comparison study on the synthesis and characterization of perovskite SrSnO3 (SSO) and Sr2SnO4 (S2SO). Rietveld refinement studies were performed on both prepared samples and suggest that they crystallized in cubic (SSO) and tetragonal (S2SO) structures. Fourier-transform infrared (FTIR) and Raman spectroscopy studies supported the XRD observations. Improved dielectric parameters were observed for S2SO over SSO due to differences in dislocation density, larger crystallite size, and denser microstructure. The electrical conduction and relaxation processes followed the Arrhenius type in both samples through the migration of oxygen vacancies via the Sn-site and the transfer of electrons between the Sn sites in two different temperature regions. These processes in the samples occurred via correlated barrier hopping (CBH) in SSO and the non-overlapping of small-polaron tunnelling (NSPT) in S2SO. The conduction and relaxation processes had similar sources of charge carriers but differed in the concentration and mobility of charge carriers. The presented materials can be utilized for dielectric capacitors, sensors, and mixed ionic and electronic conductor-based electrodes in IT-SOFC applications.
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