A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS2

Jiaying Jian; Honglong Chang; Pengfan Dong; Zewen Bai; Kangnian Zuo

doi:10.1039/D0RA10302K

A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂†

Jiaying Jian,

*^abc Honglong Chang,

*^a Pengfan Dong,^c Zewen Bai^c and Kangnian Zuo^c

Author affiliations

* Corresponding authors

^a School of Mechanical Engineering, Northwestern Polytechnical University, Baoding 710072, P. R. China
E-mail: jianjiaying@nwpu.edu.cn, changhl@nwpu.edu.cn

^b School of Electronic Information and Engineering, Xi'an Technological University, Xi'an 710021, P. R. China
E-mail: jianjiaying@xatu.edu.cn

^c Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an 710021, P. R. China

Abstract

Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS₂ was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS₂ based photodetector increase from 0.1722 A W⁻¹ and 10^14.65 Jones to 0.2907 A W⁻¹ and 10^14.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS₂ has been obtained. The criterion for the CVD-grown 2D MoS₂ to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS₂ has been proposed. The CVD-grown 2D MoS₂ and the annealed CVD-grown 2D MoS₂ are oxygen-doped MoS₂ while the vulcanized CVD-grown 2D MoS₂ is pure MoS₂. The variation in the photoelectric performance of CVD-grown 2D MoS₂ results from differences in the O-doping concentration and the bandgap.

Supplementary files

Article information

DOI: https://doi.org/10.1039/D0RA10302K
Article type: Paper
Submitted: 07 Dec 2020
Accepted: 23 Dec 2020
First published: 28 Jan 2021
This article is Open Access

Download Citation

RSC Adv., 2021,11, 5204-5217

Permissions

Request permissions

A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂

J. Jian, H. Chang, P. Dong, Z. Bai and K. Zuo, RSC Adv., 2021, 11, 5204 DOI: 10.1039/D0RA10302K

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

RSC Advances