Issue 2, 2021
From the journal:

RSC Advances

Promotion in solid phase reaction of Pt/SiOx bilayer film by electron-orbital-selective-excitation

H. Yasuda, ORCID logo *ab   K. Sato,ab   S. Ichikawa, ORCID logo ab   M. Imamura,c   K. Takahashi ORCID logo c  and  H. Moria  

* Corresponding authors

a Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047, Japan
E-mail: yasuda@uhvem.osaka-u.ac.jp

b Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

c Synchrotron Light Application Center, Saga University, Honjo 1, Saga 840-8502, Japan

Abstract

A thermally impossible positive free energy reaction can proceed by electron-orbital-selective excitation. When the Si 2p core level is photo-excited in Pt/SiOx bilayer films, Coulomb repulsion at the final two-hole state localized in the valence band by an interatomic Auger transition induces dissociation of the O atom and formation of a Si–Pt bond. Consequently, Pt2Si silicide is formed by a positive free energy reaction. Under a single particle excitation of the valence band, low probability of the coexistence of the two-hole state for picosecond order suppresses to allow the reaction to proceed.

Graphical abstract: Promotion in solid phase reaction of Pt/SiOx bilayer film by electron-orbital-selective-excitation

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Article information

DOI
https://doi.org/10.1039/D0RA07151J
Article type
Paper
Submitted
20 Aug 2020
Accepted
18 Dec 2020
First published
04 Jan 2021
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2021,11, 894-898

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Promotion in solid phase reaction of Pt/SiOx bilayer film by electron-orbital-selective-excitation

H. Yasuda, K. Sato, S. Ichikawa, M. Imamura, K. Takahashi and H. Mori, RSC Adv., 2021, 11, 894 DOI: 10.1039/D0RA07151J

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