This paper presents a novel method for enhancing the electroluminescence (EL) efficiency of ten-period silicon-rich oxide (SRO)/SiO₂ superlattice-based light-emitting diodes (LEDs). A hydrogen ion beam (HIB) was used to irradiate each SRO layer of the superlattices to increase the interfacial roughness on the nanoscale and the density of the Si nanocrystals (Si NCs). Fowler–Nordheim (F–N) tunneling was the major mechanism for injecting the carriers into the Si NCs. The barrier height of the F–N tunneling was lowered by forming a nano-roughened interface and the nonradiative P_b centers were passivated through the HIB treatment. Additionally, the reflectance of the LEDs was lowered because of the nano-roughened interface. These factors considerably increased the slope efficiency of EL and the maximum output power of the LEDs. The lighting efficiency increased by an order of magnitude, and the turn-on voltage decreased considerably. This study established an efficient approach for obtaining bright Si NC/SiO₂ superlattice-based LEDs.