Lateral graphene p–n junctions formed by the graphene/MoS2 hybrid interface

Jie Meng; Hua-Ding Song; Cai-Zhen Li; Yibo Jin; Lei Tang; Dameng Liu; Zhi-Min Liao; Faxian Xiu; Da-Peng Yu

doi:10.1039/C5NR02552D

Lateral graphene p–n junctions formed by the graphene/MoS₂ hybrid interface†

Jie Meng,^a Hua-Ding Song,^a Cai-Zhen Li,^a Yibo Jin,^b Lei Tang,^b Dameng Liu,^c Zhi-Min Liao,

*^ad Faxian Xiu*^b and Da-Peng Yu*^ad

Author affiliations

* Corresponding authors

^a State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, P.R. China
E-mail: liaozm@pku.edu.cn

^b State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
E-mail: faxian@fudan.edu.cn

^c State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China

^d Collaborative Innovation Center of Quantum Matter, Beijing, China
E-mail: yudp@pku.edu.cn

Abstract

Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p–n junctions based on graphene/MoS₂ hybrid interfaces. Monolayered graphene across the monolayered MoS₂ boundary is divided into n-type regions on the MoS₂ and p-type regions on the SiO₂ substrate. Such van der Waals heterostructure based graphene p–n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS₂ regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications.

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DOI: https://doi.org/10.1039/C5NR02552D
Article type: Paper
Submitted: 20 Apr 2015
Accepted: 02 Jun 2015
First published: 04 Jun 2015

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Nanoscale, 2015,7, 11611-11619

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Lateral graphene p–n junctions formed by the graphene/MoS₂ hybrid interface

J. Meng, H. Song, C. Li, Y. Jin, L. Tang, D. Liu, Z. Liao, F. Xiu and D. Yu, Nanoscale, 2015, 7, 11611 DOI: 10.1039/C5NR02552D

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Lateral graphene p–n junctions formed by the graphene/MoS₂ hybrid interface†

Abstract

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Lateral graphene p–n junctions formed by the graphene/MoS₂ hybrid interface

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