Room temperature agglomeration for the growth of BiTeI single crystals with a giant Rashba effect

R. Sankar; I. Panneer Muthuselvam; Christopher John Butler; S.-C. Liou; B. H. Chen; M.-W. Chu; W. L. Lee; Minn-Tsong Lin; R. Jayavel; F. C. Chou

doi:10.1039/C4CE01006J

Room temperature agglomeration for the growth of BiTeI single crystals with a giant Rashba effect

R. Sankar,^a I. Panneer Muthuselvam,^a Christopher John Butler,^b S.-C. Liou,^a B. H. Chen,^a M.-W. Chu,^a W. L. Lee,^c Minn-Tsong Lin,^d R. Jayavel^e and F. C. Chou*^afg

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* Corresponding authors

^a Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
E-mail: fcchou@ntu.edu.tw

^b Department of Physics, National Taiwan University, Taipei 10617, Taiwan

^c Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

^d Institute of Atomic and molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

^e Anna University, Crystal Growth Centre, Chennai-600025, India

^f National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

^g Taiwan Consortium of Emergent Crystalline Materials, National Science Council, Taipei 10622, Taiwan

Abstract

We report a room temperature agglomeration (RTA) procedure to grow highly homogeneous and impurity-free BiTeI single crystals safely. The proposed four-step procedure of mixing and heating is able to prevent severe iodine loss and avoid the danger of explosion during large scale crystal growth. Following the RTA treatment of the precursor, the single crystals obtained from three different growth methods, including vertical Bridgman, melt growth and chemical vapour transport (CVT), were compared. Crystals grown using the Bridgman method showed the highest residual-resistance ratio (RRR) and mobility, and the largest domain size among the three. The crystal quality and purity have been confirmed using X-ray diffraction, Electron Probe Microanalysis (EPMA), resistivity, TEM, and STM. Additionally, Mn-intercalated and -substituted BiTeI crystals have also been investigated.

CrystEngComm

Room temperature agglomeration for the growth of BiTeI single crystals with a giant Rashba effect

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Room temperature agglomeration for the growth of BiTeI single crystals with a giant Rashba effect

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