Issue 24, 2013

High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization

Abstract

Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications.

Graphical abstract: High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization

Supplementary files

Article information

Article type
Communication
Submitted
29 Jul 2013
Accepted
25 Sep 2013
First published
26 Sep 2013

Nanoscale, 2013,5, 12104-12110

High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization

W. Fu, C. Nef, A. Tarasov, M. Wipf, R. Stoop, O. Knopfmacher, M. Weiss, M. Calame and C. Schönenberger, Nanoscale, 2013, 5, 12104 DOI: 10.1039/C3NR03940D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements