Issue 12, 2013
From the journal:

Physical Chemistry Chemical Physics

Doping induced structural changes in colloidal semiconductor nanowires

Krishna Prasad Kandel,a   Ullrich Pietsch,a   Zhen Li*b  and  Özgül Kurtulus Öztürk*c  

* Corresponding authors

a Department of Physics, University of Siegen, 57068 Siegen, Germany

b Institute for Superconducting and Electronic Materials, The University of Wollongong, NSW 2500, Australia
E-mail: zhenl@uow.edu.au
Fax: +61-2-42215731
Tel: +61-2-42215163

c Department of Physics, Dogus University, 34722 Istanbul, Turkey
E-mail: okurtulus@dogus.edu.tr

Abstract

Undoped and Mn2+-doped CdSe nanowires (NWs) grown by a solution–liquid–solid (SLS) method using Bi nanocatalysts have been studied by X-ray powder diffraction measurements. Except for heavily doped nanowires no measurable changes in nanowire lattice parameters were observed. The lattice parameter of heavily doped nanowires shrinks by about 0.5% compared with the undoped ones, which corresponds to a doping concentration of 1.6%. For the other samples no change in lattice parameter is measured referring to a doping level much below 1%. Real structural parameters of nanowires were found to vary as a function of doping level, such as the zinc blende to wurtzite ratio, the static Debye–Waller factor, axial strain, and the number of stacking faults. Compared with the undoped nanowires the overall perfection is slightly improved for low doping but deteriorates drastically for higher doping. Our results highlight the importance of controlling the dopant concentration during the preparation of doped nanostructures.

Graphical abstract: Doping induced structural changes in colloidal semiconductor nanowires

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Article information

DOI
https://doi.org/10.1039/C3CP44500C
Article type
Paper
Submitted
13 Dec 2012
Accepted
23 Jan 2013
First published
23 Jan 2013

Phys. Chem. Chem. Phys., 2013,15, 4444-4450

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Doping induced structural changes in colloidal semiconductor nanowires

K. P. Kandel, U. Pietsch, Z. Li and Ö. K. Öztürk, Phys. Chem. Chem. Phys., 2013, 15, 4444 DOI: 10.1039/C3CP44500C

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