Issue 32, 2013

Direct observation of domain wall motion and novel dielectric loss in 0.23Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 crystals

Abstract

Domain wall motion was directly observed at temperatures near to the monoclinic-to-tetragonal phase transition temperature (TM–T) in [001]-oriented 0.23Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (0.23PIN–0.42PMN–0.35PT) single crystals using a polarizing light microscope, and evident 90° and 180° domain switches were observed near the Curie temperature (TC). Two dielectric loss anomalies were observed at temperatures near TM–T in the [001]-oriented PIN–PMN–PT single crystals, while an additional dielectric loss peak was found at temperatures a few degrees below TC, which was associated with domain wall motion. Based on the domain structure observations, a domain switching mechanism was proposed to explain the novel dielectric loss peak at several degrees below TC.

Graphical abstract: Direct observation of domain wall motion and novel dielectric loss in 0.23Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 crystals

Article information

Article type
Communication
Submitted
03 May 2013
Accepted
05 Jun 2013
First published
05 Jun 2013

CrystEngComm, 2013,15, 6292-6296

Direct observation of domain wall motion and novel dielectric loss in 0.23Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 crystals

D. Lin, Z. Li, F. Li and S. Zhang, CrystEngComm, 2013, 15, 6292 DOI: 10.1039/C3CE40770E

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