Issue 13, 2012
From the journal:

Physical Chemistry Chemical Physics

Nanostructured Bi2−xCuxS3 bulk materials with enhanced thermoelectric performance

Zhen-Hua Ge,a   Bo-Ping Zhang,†*a   Yong Liua  and  Jing-Feng Lib  

* Corresponding authors

a Beijing Key Lab of New Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
E-mail: bpzhang@ustb.edu.cn
Tel: +86-10-62334195

b State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Abstract

Nanostructured Bi2−xCuxS3 (x = 0, 0.002, 0.005, 0.007, 0.01, 0.03) thermoelectric polycrystals were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods. The effect of Cu content on the microstructure and thermoelectric property of Bi2−xCuxS3 bulk samples was investigated. It was found that the subtle tailoring of Cu content could reduce both the electrical resistivity and the thermal conductivity at the same time, and consequently enhancing the thermoelectric property. A low electrical resistivity of 1.34 × 10−4 Ω m−1 and a low thermal conductivity of 0.52 W m−1 K−1 were obtained for the Bi1.995Cu0.005S3 sample at 573 K. The low thermal conductivity is supposed to be due to the nanoscopic Cu-rich regions embedded in the host matrix. A peak ZT value of 0.34 at 573 K was achieved for the Bi1.995Cu0.005S3 composition, which is the highest value in the Bi2S3 system reported so far.

Graphical abstract: Nanostructured Bi2−xCuxS3 bulk materials with enhanced thermoelectric performance

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Article information

DOI
https://doi.org/10.1039/C2CP23955H
Article type
Paper
Submitted
11 Dec 2011
Accepted
06 Feb 2012
First published
06 Feb 2012

Phys. Chem. Chem. Phys., 2012,14, 4475-4481

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Nanostructured Bi2−xCuxS3 bulk materials with enhanced thermoelectric performance

Z. Ge, B. Zhang, Y. Liu and J. Li, Phys. Chem. Chem. Phys., 2012, 14, 4475 DOI: 10.1039/C2CP23955H

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