Issue 23, 2011
From the journal:

Physical Chemistry Chemical Physics

Mixed conductivity in nanocrystalline highly acceptor doped cerium oxide thin films under oxidizing conditions†

Marcus C. Göbel,a   Giuliano Gregori*a  and  Joachim Maiera  

* Corresponding authors

a Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
E-mail: g.gregori@fkf.mpg.de, s.weiglein@fkf.mpg.de
Fax: +49-711-689-1722

Abstract

We report on the investigation of 10 mol% gadolinium-doped cerium oxide thin films of various microstructures prepared by pulsed laser deposition. Depending on substrate, growth conditions and hence microstructure, the electric conductivity values vary considerably by several orders of magnitude. Remarkably, in the sample with the highest grain boundary density, we even have evidence of substantial electronic conductance under oxidizing conditions despite the large acceptor level. This possibly surprising result can be explained by an increased space charge potential at the grain boundaries in combination with the small grain size of 10 nm that leads to an enrichment of excess electrons while the ion conduction is simultaneously blocked by vacancy-depleted regions.

Graphical abstract: Mixed conductivity in nanocrystalline highly acceptor doped cerium oxide thin films under oxidizing conditions

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Article information

DOI
https://doi.org/10.1039/C1CP20248K
Article type
Paper
Submitted
28 Jan 2011
Accepted
04 Apr 2011
First published
13 May 2011

Phys. Chem. Chem. Phys., 2011,13, 10940-10945

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Mixed conductivity in nanocrystalline highly acceptor doped cerium oxide thin films under oxidizing conditions

M. C. Göbel, G. Gregori and J. Maier, Phys. Chem. Chem. Phys., 2011, 13, 10940 DOI: 10.1039/C1CP20248K

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