Issue 7, 2010

High-yield synthesis of In2−xGaxO3(ZnO)3 nanobelts with a planar superlattice structure

Abstract

Homologous compound In2−xGaxO3(ZnO)3 (x ≈ 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2−xGaxO3(ZnO)3 (x ≈ 0.18) with lattice constants a = 0.335 nm and c = 4.24 ± 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In–O layers and In1−xGax/Zn–O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface.

Graphical abstract: High-yield synthesis of In2−xGaxO3(ZnO)3 nanobelts with a planar superlattice structure

Additions and corrections

Article information

Article type
Communication
Submitted
05 Jan 2010
Accepted
16 Apr 2010
First published
18 May 2010

CrystEngComm, 2010,12, 2047-2050

High-yield synthesis of In2−xGaxO3(ZnO)3 nanobelts with a planar superlattice structure

L. L. Wu, F. W. Liu, Z. Q. Chu, Y. Liang, H. Y. Xu, H. Q. Lu, X. T. Zhang, Q. Li and S. K. Hark, CrystEngComm, 2010, 12, 2047 DOI: 10.1039/B927451K

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