Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor

Chih-Heng Lin; Cheng-Yun Hsiao; Cheng-Hsiung Hung; Yen-Ren Lo; Cheng-Che Lee; Chun-Jung Su; Horng-Chin Lin; Fu-Hsiang Ko; Tiao-Yuan Huang; Yuh-Shyong Yang

doi:10.1039/B812968A

Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor†

Chih-Heng Lin,‡^a Cheng-Yun Hsiao,‡^a Cheng-Hsiung Hung,^b Yen-Ren Lo,^a Cheng-Che Lee,^a Chun-Jung Su,^b Horng-Chin Lin,^b Fu-Hsiang Ko,^c Tiao-Yuan Huang^b and Yuh-Shyong Yang*^ad

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* Corresponding authors

^a Department of Biological Science and Technology, National Chiao Tung University, Hsinchu, Taiwan
E-mail: ysyang@faculty.nctu.edu.tw

^b Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

^c Institute of Nanotechnology, National Chiao Tung University, Hsinchu, Taiwan

^d Instrument Technology Research Center and National Nano Device Laboratories, NARL, Hsinchu, Taiwan

Abstract

An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.

Chemical Communications

Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor†

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Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor

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