Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

Dingbo Chen; Zhikun Liu; Xing Lu; Lijun Wan; Runze Li; Zhichao Yang; Guoqiang Li

doi:10.1039/C9TC00017H

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Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

Dingbo Chen,^ab Zhikun Liu,

*^ab Xing Lu,^c Lijun Wan,^ab Runze Li,^a Zhichao Yang^ab and Guoqiang Li

*^ab

Author affiliations

* Corresponding authors

^a State Key Laboratory of Luminescent Material and Devices, South China University of Science and Technology, Guangzhou 510640, China
E-mail: liuzhikun@scut.edu.cn, msgli@scut.edu.cn

^b The School of Materials Science and Engineering, South China University of Science and Technology, Guangzhou 510640, China

^c The school of Electronic and Information Engineering, South China University of Science and Technology, Guangzhou 510640, China

Abstract

Efficiency is essential to an integrated lighting system. In this work, monolithic integration of AlGaN/GaN high electron mobility transistors (HEMTs) with vertical-structure InGaN/GaN light emitting diodes (LEDs) was studied. An Mg-doping process was investigated to reduce the interconnection resistance. As a result, its equivalent external quantum efficiency (EEQE) was 6.15% and the light output power per module area (LOPMA) of the integrated device was 12.5 W cm⁻², both of which were significantly higher than those of previously reported LED and HEMT integrated devices. Aiming at improving performances at the system level, the finding paves the way for practical application of GaN integrated lighting systems.

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DOI: https://doi.org/10.1039/C9TC00017H
Article type: Communication
Submitted: 02 Jan 2019
Accepted: 14 Feb 2019
First published: 15 Feb 2019

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J. Mater. Chem. C, 2019,7, 2823-2828

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Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

D. Chen, Z. Liu, X. Lu, L. Wan, R. Li, Z. Yang and G. Li, J. Mater. Chem. C, 2019, 7, 2823 DOI: 10.1039/C9TC00017H

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Journal of Materials Chemistry C

Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

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Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

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