Issue 42, 2018

Reversible resistive switching behaviour in CVD grown, large area MoOx

Abstract

Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼103 and stable data retention of >104 s are achieved. As such, this work demonstrates the viability of MoOx as a resistive memory element and paves the way for future two-dimensional resistive memory technologies.

Graphical abstract: Reversible resistive switching behaviour in CVD grown, large area MoOx

Supplementary files

Article information

Article type
Paper
Submitted
31 May 2018
Accepted
05 Aug 2018
First published
07 Aug 2018

Nanoscale, 2018,10, 19711-19719

Reversible resistive switching behaviour in CVD grown, large area MoOx

F. Rahman, T. Ahmed, S. Walia, E. Mayes, S. Sriram, M. Bhaskaran and S. Balendhran, Nanoscale, 2018, 10, 19711 DOI: 10.1039/C8NR04407D

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