Issue 59, 2016, Issue in Progress

Engineering the crystallinity of tin disulfide deposited at low temperatures

Abstract

Tin disulfide (SnS2), which exhibits a two-dimensional (2D) layered structure, is considered to be a promising channel material for thin film transistors because of its high electrical performance and low temperature processibility. In this work, we deposited crystalline SnS2 at 150 °C using atomic layer deposition (ALD) which is compatible with current electronic device processing methods. And then, crystalline SnS2 films were annealed to investigate the change in crystallinity. We carried out sulfur annealing of the SnS2 films at temperatures of 250, 300 and 350 °C. The effects of sulfur annealing were investigated in a mixed gas atmosphere of 100 sccm argon (Ar) and 5 sccm hydrogen (H2). SnS2 samples were examined using XRD, TEM, XPS, UV-vis and PL. The crystallinity of the SnS2 films after annealing was improved, and its grain size became larger compared with the as-deposited SnS2 film. We also observed a clear two dimensional layered structure of SnS2 using high resolution TEM. The change in the optical properties of the SnS2 films was observed using UV-vis and PL.

Graphical abstract: Engineering the crystallinity of tin disulfide deposited at low temperatures

Article information

Article type
Paper
Submitted
30 Mar 2016
Accepted
27 May 2016
First published
03 Jun 2016

RSC Adv., 2016,6, 54069-54075

Engineering the crystallinity of tin disulfide deposited at low temperatures

G. Ham, S. Shin, J. Park, J. Lee, H. Choi, S. Lee and H. Jeon, RSC Adv., 2016, 6, 54069 DOI: 10.1039/C6RA08169J

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