Microwave-assisted synthesis of Bi2Se3 ultrathin nanosheets and its electrical conductivities

Haiming Xu; Gang Chen; Rencheng Jin; Dahong Chen; Yu Wang; Jian Pei; Yongqiang Zhang; Chunshuang Yan; Zhuangzhuang Qiu

doi:10.1039/C4CE00004H

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Microwave-assisted synthesis of Bi₂Se₃ ultrathin nanosheets and its electrical conductivities†

Haiming Xu,^a Gang Chen,*^a Rencheng Jin,^b Dahong Chen,^a Yu Wang,^a Jian Pei,^a Yongqiang Zhang,^a Chunshuang Yan^a and Zhuangzhuang Qiu^a

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* Corresponding authors

^a Department of Chemistry, Harbin Institute of Technology, Harbin 150001, PR China
E-mail: gchen@hit.edu.cn
Fax: +86 451 86413753
Tel: +86 0451 86413753

^b School of Chemistry & Materials Science, Ludong University, Yantai 264025, PR China

Abstract

Ultrathin Bi₂Se₃ nanosheets have been successfully fabricated through a microwave-assisted approach in the presence of ethylene glycol (EG) under 1 kW microwave power for 1 minute. The structure and morphology of the obtained products were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), selected-area electron diffraction (SAED) and Raman spectroscopy techniques. Based on the control experiments, a possible growth mechanism of Bi₂Se₃ ultrathin nanosheets was proposed. Furthermore, the thermoelectric transport properties of the nanosheets were investigated by measuring the electrical conductivity and the Seebeck coefficient at temperatures ranging from 298 to 523 K. The maximum power factor can reach up to 157 μW m⁻¹ K⁻² at 523 K due to the ultrathin nature of the as-prepared sample, indicating that this promising approach can be extended to the synthesis of other thermoelectrical materials.

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Article information

DOI: https://doi.org/10.1039/C4CE00004H
Article type: Paper
Submitted: 02 Jan 2014
Accepted: 22 Feb 2014
First published: 24 Feb 2014

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CrystEngComm, 2014,16, 3965-3970

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Microwave-assisted synthesis of Bi₂Se₃ ultrathin nanosheets and its electrical conductivities

H. Xu, G. Chen, R. Jin, D. Chen, Y. Wang, J. Pei, Y. Zhang, C. Yan and Z. Qiu, CrystEngComm, 2014, 16, 3965 DOI: 10.1039/C4CE00004H

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