Issue 27, 2013
From the journal:

Journal of Materials Chemistry C

Atomic layer deposition of ferroelectric LiNbO3†

Erik Østreng,*a   Henrik H. Sønsteby,a   Timo Sajavaara,b   Ola Nilsena  and  Helmer Fjellvåga  

* Corresponding authors

a Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo, P.O. Box 1033 Blindern, N-0315 Oslo, Norway
E-mail: erik.ostreng@smn.uio.no
Fax: +47 2285 5565
Tel: +47 2285 5558

b Dept of Physics, University of Jyväskylä, Finland

Abstract

The ferroelectric and electro-optical properties of LiNbO3 make it an important material for current and future applications. It has also been suggested as a possible lead-free replacement for present PZT-devices. The atomic layer deposition (ALD) technique offers controlled deposition of films at an industrial scale and thus becomes an interesting tool for growth of LiNbO3. We here report on ALD deposition of LiNbO3 using lithium silylamide and niobium ethoxide as precursors, thereby providing good control of cation stoichiometry and films with low impurity levels of silicon. The deposited films are shown to be ferroelectric and their crystalline orientations can be guided by the choice of substrate. The films are polycrystalline on Si (100) as well as epitaxially oriented on substrates of Al2O3 (012), Al2O3 (001), and LaAlO3 (012). The coercive field of samples deposited on Si (100) was found to be ∼220 kV cm−1, with a remanent polarization of ∼0.4 μC cm−2. Deposition of lithium containing materials is traditionally challenging by ALD, and critical issues with such deposition are discussed.

Graphical abstract: Atomic layer deposition of ferroelectric LiNbO3

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Article information

DOI
https://doi.org/10.1039/C3TC30271G
Article type
Paper
Submitted
11 Feb 2013
Accepted
13 May 2013
First published
13 May 2013
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2013,1, 4283-4290

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Atomic layer deposition of ferroelectric LiNbO3

E. Østreng, H. H. Sønsteby, T. Sajavaara, O. Nilsen and H. Fjellvåg, J. Mater. Chem. C, 2013, 1, 4283 DOI: 10.1039/C3TC30271G

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