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Telecom-band quantum dot technologies for long-distance quantum networks

Nature Nanotechnology volume 18, pages 1389–1400 (2023)Cite this article

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Abstract

A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the world by linking different quantum nodes via quantum states of light. To facilitate long-haul operations, quantum repeaters must operate at telecom wavelengths to take advantage of both the low-loss optical fibre network and the established technologies of modern optical communications. Semiconductor quantum dots have thus far shown exceptional performance as key elements for quantum repeaters, such as quantum light sources and spin–photon interfaces, but only in the near-infrared regime. Therefore, the development of high-performance telecom-band quantum dot devices is highly desirable for a future solid-state quantum internet based on fibre networks. In this Review, we present the physics and technological developments towards epitaxial quantum dot devices emitting in the telecom O- and C-bands for quantum networks, considering both advanced epitaxial growth for direct telecom emission and quantum frequency conversion for telecom-band down-conversion of near-infrared quantum dot devices. We also discuss the challenges and opportunities for future realization of telecom quantum dot devices with improved performance and expanded functionality through hybrid integration.

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Fig. 1: Global quantum networks connected by quantum states of light.
Fig. 2: Epitaxial growth for telecom QDs.
Fig. 3: Coupling telecom-band quantum light sources into single-mode fibres.
Fig. 4: Generating telecom-band single photons via quantum frequency conversion.
Fig. 5: Advanced telecom-band quantum photonic devices based on hybrid integrations.

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Acknowledgements

We thank the early contribution to this work from S. Xu and X. Huang. Y.Y. and J.L. acknowledge the National Key R&D Program of China (2021YFA1400803), the Science and Technology Program of Guangzhou (202103030001) and the National Natural Science Foundation of China (12074442). K.S. acknowledges partial funding support from the NIST-on-a-chip programme. S.R. acknowledges financial support from the Federal Ministry of Education and Research (BMBF) via project QR.X (16KISQ014), the German Research Foundation (DFG) via project Re2974-25/1, and the European Union via project SE-QUME (20FUN05) that has received funding from the EMPIR programme co-financed by the participating states and from the European Union’s Horizon 2020 Research and Innovation programme. P.M. gratefully acknowledges the funding by the German Federal Ministry of Education and Research (BMBF) via the project QR.X (no. 16KISQ013) and the European Union’s Horizon 2020 Research and Innovation programme under grant agreement no. 899814 (Qurope). Furthermore, we acknowledge financial support by the EMPIR programme (20FUN05 SEQUME), co-financed by the participating states and from the European Union’s Horizon 2020 Research and Innovation programme. C.-M.L. and E.W. acknowledge funding support from the National Science Foundation (grant numbers OMA1936314, PHY1915375, ECCS1933546), the Office of Naval Research (ONR) (grant number N000142012551), the Air Force Office of Scientific Research (AFOSR) (grant number 1021098624), the Maryland ARL quantum partnership (MAQP) and the Quantum Leap Challenge Institute for Robust Quantum Simulation.

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Authors and Affiliations

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou, China

    Ying Yu, Shunfa Liu & Jin Liu

  2. Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, USA

    Chang-Min Lee & Edo Waks

  3. Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart, Germany

    Peter Michler

  4. Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany

    Stephan Reitzenstein

  5. Joint Quantum Institute, NIST/University of Maryland, College Park, MD, USA

    Kartik Srinivasan & Edo Waks

  6. Microsystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA

    Kartik Srinivasan

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Yu, Y., Liu, S., Lee, CM. et al. Telecom-band quantum dot technologies for long-distance quantum networks. Nat. Nanotechnol. 18, 1389–1400 (2023). https://doi.org/10.1038/s41565-023-01528-7

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