Abstract
The gaseous species desorbed from porous silicon (PS) were investigated using the method of temperature programmed desorption (TPD) and fourier transform infrared spectroscopy (FTIR). Silicon wafers (25–50 Ω cm, p−, FZ) were anodised in 40% HF and HF/C2H5OH electrolytes. The PS samples were linearly heated at 1.5 K s−1 using a custom built heating unit in a oil-free pump backed vacuum chamber at a base pressure of <10−8 torr. A quadrupole mass spectrometer, which was used as the detector, was fitted in line of sight of the sample at a distance of about 6 mm. It was observed that silane was liberated during the heating of porous silicon samples produced from both electrolytes. The peak temperature at which this occurred was at 570 ± 10 K. This temperature coincides with the temperature of silicon-silicon bond breakage in ≡Si–SiH3 groups on the pore walls, as shown by the FTIR results. It is proposed that silane formation involves the reaction of the Si-silyl group with moisture: ≡Si–SiH3 + H2O → ≡Si–OH + SiH4.
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Gunasingam, P.V., Goldspink, G. An Investigation into Silane Evolution from Porous Silicon by Temperature Programmed Desorption Method. Journal of Porous Materials 7, 187–190 (2000). https://doi.org/10.1023/A:1009682603598
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DOI: https://doi.org/10.1023/A:1009682603598