Abstract
Fully depleted, back-illuminated charge-coupled devices fabricated at Lawrence Berkeley National Laboratory on high-resistivity silicon are described. Device operation and technology are discussed, as well as the results on telescopes and future plans.
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Burke, B. E. and Gajar, S. A.: 1991, ‘Dynamic Suppression of Interface-state Dark Current in Buriedchannel CCDs’, IEEE Trans. Elec. Dev. 38(2), 285.
Burke, B. E., Gregory, J. A., Bautz, M.W., Prigozhin, G. Y., Kissel, S. E., Kosicki, B. B., Loomis, A. H. and Young, D. J.: 1997, ‘Soft X-ray CCD Imagers for AXAF’, IEEE Trans. Elec. Dev. 44(10), 1633.
Groom, D. E., Eberhard, P. H., Holland, S. E., Levi, M. E., Palaio, N. P., Perlmutter, S., Stover, R. J. and Wei, M.: 1999, ‘Point-spread Function in Depleted and Partially Ddepleted CCD's’, Proc. 4th ESO Workshop on Optical Detectors for Astronomy, Garching, Germany.
Arjun Dey, private communication.
Holland, S. E., Godhaber, G., Groom, D. E., Moses, W. W. et al., 1996, A 200×200 CCD Image Sensor Fabricated on High-resistivity Silicon, IEDM Technical Digest, p. 911.
Holland, S. E. et al.: 1997, ‘Development of Back-illuminated, Fully-depleted CCD Image Sensors for use in Astronomy and Astrophysics’, presented at the 1997 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Bruges, Belgium.
Holland, S. E., Groom, D. E., Palaio, N. P., Stover, R. J. and Wei, M.: ‘Fully-depleted, Backilluminated Charge-coupled Deviced Fabricated on High-resistivity Silicon’, IEEE Trans. Elec. Dev., in press.
Jorden, P.: 2002, Secrets of E2V Technologies CCDs, these proceedings.
Perlmutter, S., Aldering, G., Della Valle, M., Deustua, S., Ellis, R. S., Fabbro, S., Fruchter, A., Goldhaber, G., Groom, D. E., Hook, I. M., Kim, A. G., Kim, M. Y., Knop, R. A., Lidman, C., McMahon, R. G., Nugent, P., Pain, R., Ranagia, N., Pennypacker, C. R., Ruiz-Lapuente, P., Schaefer, B. and Walton, N.: 1998, ‘Discovery of a Supernova Explosion at Half the Age of the Universe’, Nature 391, 51.
U.S. Patent: 2000, Patent No. 6,259,085, 10 July 2000, Fully Depleted Back Illuminated CCD.
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Holland, S. An Overview of CCD Development at Lawrence Berkeley National Laboratory. Experimental Astronomy 14, 83–89 (2002). https://doi.org/10.1023/B:EXPA.0000004341.11906.bf
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DOI: https://doi.org/10.1023/B:EXPA.0000004341.11906.bf