Abstract
Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS (CH3SiCl3) as a source precursor and H2 or N2 as a diluent gas. The experiments were performed at fixed conditions of a flow rate of 100 sccm for each MTS and carrier gas, a flow rate of 300 sccm for diluent gas addition, and a total pressure of 5 torr. The effect of temperature from 900°C to 1350°C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H2 diluent gas ambient. At MTS-H2 system, the deposition mechanism changed from chemical reaction to mass transfer controlled reaction with temperature. Otherwise, For MTS-H2-N2 system, surface chemical reaction controlled the growth process at whole deposition temperature ranges. For N2 addition, surface morphology of leaf-like structure appeared, and for H2, faceted structure at 1350°C. The observed features were involved by crystalline phase of β-SiC and surface composition with different gas ambient.
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References
D. P. Stinton, T. M. Besmann and R. A. Lowden, Ceram. Bull. 67 (1988) 350.
W. R. Haigis and M. A. Pickering, Materials & Design 14 (1993) 130.
S. Somiya and Y. Inomata, “Silicon Carbide Ceramics-1 Fundamentals and Solid Reaction” (Elsevier Science Publishers Ltd., 1991).
F. Kobayashi, K. Ikawa and K. Iwamoto, J. Crystal Growth 28 (1975) 395.
D. Lespiaux, F. Langlais, R. Naslain, S. Schamm and J. Sevely, J. Mater. Sci. 30 (1995) 1500.
H. S. Kim and D. J. Choi, J. Amer. Ceram. Soc. 82(2) (1999) 331.
D. J. Kim, D. J. Choi and Y. W. Kim, Thin Solid Films 266 (1995) 192.
S. Motojima and M. Hasegawa, J. Vac. Sci. Technol. A 8(5) (1990) 3763.
F. Loumagne, F. Langlais and R. Naslain, J. Crytal Growth 155 (1995) 198.
J. M. Grow, R. A. Levy, Y. T. Shi and R. L. Pfeffer, J. Electrochem. Soc. 140(3) (1993) 851.
N. Nordell, S. Nishino, J. W. Yang, C. Jacob and P. Pirouz, ibid. 142(2) (1995) 565.
C. H. Wu, C. Jacob, X. J. Ning, S. Nishino and P. Pirouz, J. Crystal Growth 158 (1996) 480.
J. M. Grow, R. A. Levy and M. Bhaskaran, J. Electrochem. Soc. 140(10) (1993) 3001.
F. C. Eversteyn, P. J. W. Severin, C. H. J. V. D. Brekel and H. L. Peek, ibid. 117(7) (1970) 925.
Gaskell, “An Introduction to Transport Phenomena in Materials Engineering” (Macmillan Publishing Co., 1992) p. 613.
A. S. Grove, “Physics and Technology of Semiconductor Devices” (John Wiley and Sons, Inc., 1967).
R. C. Reid, J. M. Prausnitz and T. K. Sherwood, 'The Properties of Gases and Liquids' (McGraw-Hill Book Co., 1977).
D. H. Kuo, D. J. Cheng and W. J. Shyy, J. Electrochem. Soc. 137(11) (1990) 3688.
T. T. Lin and M. H. Hon, J. Mater. Sci. 30 (1995) 2675.
D. Lespiaux and F. Langlais, Thin Solid Films 265 (1995) 40.
C. C. Chiu, S. B. Desu and G. Chen, J. Mater. Sci. 10(5) (1995) 1099.
B. W. Sheldon, Solgasmix-PV for the PC, Oak Ridge National Laboratory, October 1989.
G. S. Fischman and W. T. Petuskey, J. Am. Ceram. Soc. 68(4) (1985) 185.
C. S. Barrett and T. B. Massalski, 'Structure of Metals' (Pergamon Press, Oxford, 1980) p. 204.
D. N. Lee, J. Mater. Sci. 24 (1989) 4375.
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Lee, YJ., Choi, DJ., Park, JY. et al. The effect of diluent gases on the growth behavior of CVD SiC films with temperature. Journal of Materials Science 35, 4519–4526 (2000). https://doi.org/10.1023/A:1004808418609
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DOI: https://doi.org/10.1023/A:1004808418609