Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include:Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materialsAll the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling frameworkPredictive capabilities of device models, discussed with systematic comparisons to experimental results

'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.'

Mark Lundstrom - Purdue University

'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.'

Thomas Skotnicki - STMicroelectronics

'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.'

Asen Asenov - University of Glasgow