LPE growth of GaAs: Formation of nuclei and surface terraces*
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Cited by (32)
Low temperature LPE of Hg<inf>1-x</inf>Cd<inf>x</inf>Te from Te-rich solution and its effects
1989, Journal of Crystal GrowthLPE of GaAs and related compounds: substrate orientation and surface morphology
1982, Microelectronics JournalImprovements in the theory of growth of LPE layers of GaAs and interpretation of recent experiments
1980, Journal of Crystal GrowthTemperature gradient measurement in liquid epitaxial growth systems
1979, Journal of Crystal GrowthInterfacial elastic strains in (Al, Ga)As/GaAs heterostructures grown by liquid phase epitaxy
1978, Journal of Crystal GrowthInvestigation of the mechanism and kinetics of growth of LPE GaAs
1978, Journal of Crystal Growth
- *
This research work was supported by the Advanced Research Projects Agency of the Department of Defense under Grant No. DAHC15 71-G-6.
Copyright © 1974 Published by Elsevier B.V.