Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

doi:10.1016/j.scriptamat.2008.10.008

Scripta Materialia

Volume 60, Issue 5, March 2009, Pages 285-288

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The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3–6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%.

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Scripta Materialia

Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

J. Non-Crystalline Solids

Nuclear Instr. Meth. Phys. Res. B

Ultramicroscopy

Appl. Surf. Sci.

Ultramicroscopy

Appl. Phys. Lett.

Crys. Lattice Defects

Rev. Sci. Instrum.

Rev. Sci. Instrum.

Surf. Interf. Anal.