Elsevier

Energy Procedia

Volume 8, 2011, Pages 349-354
Energy Procedia

Electrical properties of boron, phosphorus and gallium co-doped silicon

https://doi.org/10.1016/j.egypro.2011.06.148Get rights and content
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Abstract

A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium were added as dopants. The introduction of Gallium as a third dopant allowed for a better control of the resistivity and the doping type during ingot growth. Measured resistivity in this material is shown to be systematically higher than that calculated using Scheil's law for the dopants distribution and Klaassen's model for the majority carrier mobility. This resistivity underestimation is shown to be, at least partially, due to a reduction of the majority carrier mobility in highly compensated Si compared to Klaassen's model. A similar reduction is observed for the minority carrier mobility. We propose a correction term in the mobility calculation, to allow a greater accuracy in the prediction of the resistivity and mobility of compensated solar grade silicon.

Keywords

Silicon
Doping compensation
Carriers mobility

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