Revisiting the neutral C-vacancy in diamond: Localization of electrons through DFT+U
Graphical abstract
Introduction
Defects play an important role in the properties and performance of semiconductor devices. Depending on the application, they can change the physical and chemical properties (e.g. the introduction of luminescent centres [1], [2]) or need to be avoided (e.g. because they deteriorate conductivity [3]). In the case of diamond, intrinsic defects have been studied at increasing levels of theory, in lock-step with the advancing state of the art [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14]. In recent years, the use of hybrid functionals has become more and more frequent in the solid state community as a result of ever growing computational resources, and the continuous improvement of methodologies. Some authors even used hybrid functionals in their simulation of infrared and Raman spectra, this of course in combination with small localized basis-sets [15], [16]. Although it is getting quite common to use such hybrid functionals to accurately determine the electronic structure and local spin polarization of complicated systems [17], [18], [19], [20], [21], their computational cost is still prohibitively high for extensive usage [22]; e.g. structure optimization of large super cells required for studying single defects. For most structure optimizations, pure density functional theory (DFT) functionals (LDA and GGA) perform admirably well. However, in strongly correlated systems in which the specific electronic structure is tightly related to the atomic structure, problems occur. The neutral C-vacancy in diamond is such a system.
The formation of a neutral vacancy in diamond gives rise to four dangling bonds. This structure has a Td symmetry at this level of consideration. Each dangling bond is occupied by a single electron, which can have either up or down spin. As the other electrons of the C atoms neighboring the vacancy are involved in strong covalent bonds, the four electrons in the dangling bonds can only couple to each other, giving rise to three possible spin states for the vacancy defect: Sz = 0,1, and 2. The corresponding defect states are expected to be localized at the defect site, with an energy in the band gap of the host material. Of the three spin states only the Sz = 2 state (with all four electrons having the same spin) has the same Td symmetry as the host lattice. In case of the Sz = 0 and 1 spin states, the magnetic configuration has a D2d and a C3v symmetry, respectively. In case of the Sz = 0 spin state Jahn-Teller distortion will further lower the symmetry to C2v [14], [23]. As such, one may expect the modeling of this defect to be problematic.
Recently, Zelferino and co-workers argued that due to the open shell nature of the defect, only functionals including a fraction of the exact exchange term can adequately describe this defect [14]. They observe that pure DFT functionals present a qualitatively incorrect electronic structure and fail to indicate the correct spin ground state. As vacancies play a crucial role in many technologically interesting defects in diamond, such as the NV-center [24], [25], [26], [27], it is important to understand how and why pure DFT fails for the vacancy defect. Furthermore, as the solution of hybrid functionals is too computationally expensive for large scale usage, an alternative post-DFT approach is desirable, albeit only as a means of providing a more accurate defect geometry for subsequent analysis using a hybrid functional.
In this work, we will therefore revisit the neutral C vacancy in diamond. After introducing the computational methods used, results are presented and discussed in Section 3. We first examine the behavior of the defect using a pure DFT functional, and show how using knowledge of the magnetic configuration can help us avoid getting stuck in a local minimum. The qualitative failure with regard to the defect states is recognised as the well-known band gap problem of DFT. Hybrid functional calculations are performed to provide reference data, and subsequently we present a DFT+U study of the defect. We show how the on-site Coulomb and exchange parameters, U and J, influence different parts of the electronic structure independently. An optimum value of (U,J) = (8.56, 15.06) eV is obtained after fitting to the reference hybrid functional electronic structure obtained. After validating the (U,J)-pair for the neutral vacancy defect, we also address the ⟨001⟩ split-interstitial defect to test the transferability of the U and J parameters. The conclusions are presented in the final section of the manuscript.
Section snippets
Computational details
The single vacancy defect is simulated using a conventional cubic 64-atom cell from which a single C atom is removed (see Fig. 1), giving rise to a vacancy concentration of 1.56%. Although vacancy concentrations are generally lower in experiments, a super cell of this size gives a reasonable qualitative picture of the electronic structure. As the goal of the present work is to provide a computationally cheaper alternative to hybrid functional calculations, rather than a quantitative study of
Results and discussion
The neutral C vacancy defect has previously been studied both theoretically and experimentally by several researchers [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [23], [31]. The experimental picture has clearly converged showing a diamagnetic ground state (Sz = 0), with the Sz = 1 state being slightly less stable, and the high spin Sz = 2 state much less stable. The theoretical picture for DFT calculations appear less coherent with conflicting results regarding the actual ground state
Conclusion
In this work, we revisited the neutral C-vacancy using the PBE and HSE06 functionals. We show that for PBE the correct stability order is closely related to the correct local magnetization of the carbon atoms neighboring the vacancy. The latter was shown to depend significantly on the initial guess, indicative of a phase space with many local minima, making this an important aspect to consider when simulating defects in diamond. We showed that even if the stability order is correctly predicted,
Prime novelty statement
DFT+U can be used to provide hybrid functional quality electronic structure results at a fraction of the cost. For the neutral vacancy defect in diamond the optimum parameter-pair is (U,J) = (8.56,15.06) eV. The same parameters are also suitable for other intrinsic defects such as the ⟨001⟩ split-interstitial defect.
Acknowledgments
The financial support via the Methusalem project NANO is greatly appreciated. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation - Flanders (FWO) and the Flemish Government – department EWI. DEPV is a postdoctoral researcher funded by the Research Foundation - Flanders (FWO) (project no. 12S3415N).
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