Elsevier

Applied Surface Science

Volume 410, 15 July 2017, Pages 454-463
Applied Surface Science

Synthesis of efficient silica supported TiO2/Ag2O heterostructured catalyst with enhanced photocatalytic performance

https://doi.org/10.1016/j.apsusc.2017.03.089Get rights and content

Highlights

  • n-type TiO2 inside and p-type Ag2O outside was designed.

  • The p–n junction formation built in an electric field.

  • The p–n junction facilitates the electrons and holes separation.

  • The degradation of dye becomes more effective with Ag2O/TiO2 catalyst.

Abstract

We develop the n-type TiO2 coated on SiO2 support abbreviated as SiO2/TiO2 (ST) followed by deposition of p-type Ag2O nanoparticles outside for the purpose of photocatalytic degradation of organic pollutants. Different composite catalysts were prepared with changing the amount AgNO3 (such as 0%, 5%, 10%, 20%, and 30%) and the composites were abbreviated as ST, STA-5, STA-10, STA-20, and STA-30, respectively. The composite catalysts were characterized with different techniques and tested for Rhodamine B (RhB) dye degradation under UV and visible light. Among the composite catalysts, the degradation efficiency of STA-20 was the highest and it degraded about 99% within 40 min under UV light-irradiation. However, the ST, STA-5, STA-10, and STA-30 composite catalysts could degrade about 21%, 47%, 58%, and 75% of the dye, respectively. Furthermore, the STA-5, STA-10, STA-20, and STA-30 composites were also tested and about 39%, 47%, 57%, and 42% of the dye, respectively, was degraded under visible light source. Hence, the formation of p–n junction heterostructure between n-type TiO2 and p-type Ag2O could enhance the degradation of RhB in both UV and visible light irradiation. It could be also potentially applicable photocatalyst for environmental remediation.

Graphical abstract

Proposed charge separation mechanism and degradation of dye with photocatalyst under light irradiation.

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Introduction

The development of science and technology in the world has led to the growth of urbanization and industrialization it causes the environmental pollutions [1], [2]. Recently, the environmental pollutions caused by organic pollutants are considered as the most serious environmental problems [3], [4]. Particularly, the removal of toxic dyes and other organic compounds from wastewaters effectively, has been the biggest challenge for researchers [5]. For this reason, the growing concerns about solving environmental problems with a green and sustainable technology, such as cleaning of wastewater and removal of organic pollutants with photocatalytic technologies have attracted much attention to researchers [6], [7], [8], [9]. Hence, designing of promising semiconductor photocatalyst materials that can be used to purify water and environmental remediation are significantly important in recent year [10], [11], [12].

Semiconductor materials with suitable band gap such as TiO2, ZrO2, ZnO, and ZnS can be used as photocatalysts to degrade organic pollutants under light sources [13], [14], [15], [16], [17]. Because of its high chemical stability, low cost, photosensitivity, and nontoxic nature, TiO2 is one of the most studied and potentially used photocatalyst semiconductors in recent years [18], [19], [20], [21]. However, TiO2 alone is not effective and has limited practical photocatalytic application because of its wider band gap, low solar energy conversion efficiency, and low adsorption ability [22], [23]. The recovery process of TiO2 from the aqueous reaction media is also difficult and limits the industrial applications because the photocatalytic reaction is mostly performed in an aqueous media. Hence, materials that can be used as carriers/support for TiO2 to separate it easily from an aqueous environment are important and silica was considered to be one of the best supports because of its physical and chemical stability [23]. The SiO2 particles also used as a substrate to absorb organic pollutants and help TiO2 to make contact with active site of the dye [24].

Nowadays, the engineering of heterogeneous semiconductor based photocatalysis has been the main research focus, and it is also considered as an efficient tool for solar water splitting and degrading organic pollutants [25], [26]. The photocatalytic activities of semiconductor materials towards degradations of organic pollutants become more efficient when the electron and hole are separated well. On the other hand, lowering the recombination rates of electrons and holes is the basic criteria to improve the photocatalytic activities of the catalysts [27], [28], [29]. The combination of semiconductors with different band gap energy to form heterojunction also improves the physico-chemical properties and the charge separation efficiency [30]. The p-type and n-type semiconductors combination together results in the generation of internal electric field [31], [32], [33]. Particularly metal oxide semiconductor materials such as Cu2O, Ag2O, ZnO, and NiO are significantly used together with TiO2 for the removal of organic pollutants [29], [34], [35], [36].

Among metal oxide semiconductors, Ag2O is promising photocatalyst because of its suitable band gap energy position (1.2 eV), easy to prepare, and highly efficient material towards removal of organic pollutants [37], [38], [39]. In heterojunction formation between p-type Ag2O and n-typeTiO2, the Ag2O nanoparticles are used to trap electron to increase the electron and hole separation efficiency generated under ultraviolet light and widen the range of photo-response to the visible region [40]. Due to this reason, the Ag2O based composite catalysts are considered as an alternative and efficient photocatalyst materials to solve environmental related issues [41], [42].

In this work, we design the synthesis of p–n based heterostructured composite catalyst, which is inherently facile method, from n-type TiO2 and p-type Ag2O semiconductors. The formation of p–n heterojunctions facilitates the electron–hole separation because it can build an electric field within the photocatalytic system. Separation of electrons and hole during reaction improve the photocatalytic activity of the catalyst. The photogenerated holes efficiently oxidize organic pollutants into water and CO2. The photogenerated electrons are trapped by Ag2O nanoparticles, and more holes will be freely available to degrade the pollutants. Moreover, the amount of Ag2O loading is also important for catalytic activities. Therefore, the optimum amount of Ag2O loaded on ST composite catalysts is demonstrated. RhB dye is used as a model organic pollutant to test our composite catalyst.

Section snippets

Chemicals

The chemicals and reagents were analytical-grade and used without further purification.

Preparation of SiO2 sphere

The preparation of SiO2 spherical particles was done according to our previous work [43]. Briefly, 1.2 g of cetyltrimethylammonium bromide (CTAB) was added in to absolute ethanol (160 mL) and DI water (240 mL) mixture and ultrasonicated for 1 min. In the reaction mixture, 3.2 mL ammonium hydroxide was added followed by continuous stirring for 30 min. Then, 4 mL of TEOS (tetraethyl orthosilicate) was also added and

Characterizations of the composite catalyst

XRD patterns of the powder samples for SiO2, Ag2O, ST, STA-5, STA-10, STA-20, and STA-30 were characterized (Fig. 1a). As it is shown from Fig. 1a, the amorphous phase of pure SiO2 (S) and the XRD patterns of the as-prepared Ag2O (A) were demonstrated for comparison purpose. The XRD patterns of the cubic Ag2O phase with the major peaks located at 2θ values of 32.8°, 38.9°, 55.0°, and 65.5° were observed (JCPDS No. 65-6811). Furthermore, XRD pattern of TiO2 after coated on the surface of

Conclusions

The Ag2O and TiO2 heterostructures deposited on SiO2 support were synthesized with facile method and the formed composite catalysts were characterized by XRD, SEM, HRTEM, and XPS. The STA-20 composite catalyst prepared with 20% Ag precursor showed the highest degradation efficiency and about 99% of RhB dye was degraded within 40 min under UV light-irradiation. The mechanism under UV-light irradiation demonstrates that the Ag2O semiconductor is used as an electron absorbent and enhances

Acknowledgments

This work was supported by Ministry of Science and Technology of the Republic of China through Grant MOST 104-2221-E- 011-169-MY3 and National Taiwan University of Science and Technology under the Grant 105H451714.

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