Elsevier

Acta Materialia

Volume 46, Issue 18, November 1998, Pages 6511-6520
Acta Materialia

Importance of metal–metal bondings at the interface of MgO and 3d-transition metals

https://doi.org/10.1016/S1359-6454(98)00288-2Get rights and content

Abstract

First principles cluster calculations of MgO(001)//M(001) (M=Sc to Cu) interfaces have been systematically made using numerical atomic orbitals as basis functions. Detailed analysis of bond overlap populations (BOP) found that the M–Mg covalent bond predominantly determines the interfacial bond-strength. M atoms prefer to be located on top of O atoms, not because the first nearest-neighbor M–O covalent bond is stronger than the M–Mg bond at the same bond-length, but because the M–Mg bond prefers to be at the second nearest-neighbor distance in order to increase the number of effective interfacial bonds from 1 to 4. The equilibrium interfacial bond-length is found to be determined by the balance of M–Mg bond-reinforcement and weakening of the M–M bond. Atomic number dependence of the interfacial bond-strength is also determined by the variation of the M–Mg BOP. It decreases with rising atomic number mainly because of the contraction of M-orbitals. Theoretical electron energy loss near edge structures (ELNES) are given to help interpretation of experimental spectra to be acquired directly from the interface.

Introduction

Synergistic effects of ceramics and metals are often utilized in components for structural and electronic applications. In order to design and control their macroscopic properties, understanding of the interface between ceramics and metals is essential. The interface is of great interest also from fundamental viewpoint, since the manner of atomic bonding changes drastically at the interface. However, our fundamental knowledge for such an interface is still very limited.

High resolution electron microscopy (HREM) works for metal/ceramic interface were started in 1980s1, 2. With the development of the HREM technique, atomic arrangements at the interface have been examined in detail. Most of these works were made for MgO/metal or Al2O3/metal, since they were considered to be good examples of metal/ceramic interfaces. Experimental HREM works of the MgO/metal interfaces have been reported by two groups3, 4. Another potentially powerful tool for the investigation of the interface is the electron energy loss spectroscopy (EELS) equipped in a nano-probe transmission electron microscope. It is expected to provide information of local chemical bonding at the interface directly by experiments. However, EELS results from the metal/ceramic interfaces are still immature. Al2O3/metal interfaces were examined by a group in Stuttgart[5] and Ikuhara et al.[6] have reported EELS from the MgO/V interface recently.

First principles calculation of MgO/metal interfaces was first reported by Scho ̈nberger et al.[7] using full-potential LMTO (linearized muffin-tin orbital) method for Ti/MgO(00 l) and Ag/MgO(001) interface. Two other results using different computational methods have recently been reported. Li et al.[8] used full-potential APW (augmented plane wave) method for Ag/MgO(001) and Fe/MgO(001) interface. Heifets et al.[9] applied Hartree–Fock type super-cell method using CRYSTAL code for Ag/MgO(001) interface. Conclusions of these three papers are similar to each other. According to them, metal atoms are preferred to be placed on the top of the oxygen atoms of the MgO(001) surface when the orientation relationship is taken to be (001)M//(001)MgO and [110]M//[100]MgO. The optimum bond length across the interface was found to be ranging from 0.26 to 0.29 nm, which is 20–40% greater than the bond length of O–Mg in crystalline MgO, i.e. 0.21 nm.

Since results of three calculations did not contradict to each other, one may not find clear requirements for another theoretical calculation for a similar kind of interface. We would like to emphasize two new objectives for the present study on the M/MgO(001) interface by a first principles cluster calculation: (1) To gain our physical insight to the interfacial bonding mechanism, overlap populations between atomic orbitals across the interface is quantitatively evaluated. For this purpose, the use of localized basis-functions is advantageous. (2) Not only some specific metals but a series of transition metals (M) as a counterpart of the interface is systematically investigated. The major outcome we would stress in this paper is the finding of the significant contribution of the M–Mg bonding at the interface. It has been widely accepted that the M–O bond is more important than the M–Mg bond, simply because metal atoms prefer to sit on O atoms rather than Mg atoms. However, when metal atoms are present on the O atoms, there are four M–Mg bonds at the distance of approx. 40% longer than the nearest neighbor M–O distance. When the M–Mg bonding is strong, these four bonds are no more negligible. To our surprise, such a simple geometry has not been explicitly considered in previous theoretical calculations except for the one by the present authors for Fe/TiX (X=C,N,O)[10]. Even when the optimum interfacial bond-length or geometries were carefully computed, the origin of the stable atomic arrangement has not been pursued in detail from the viewpoint of chemical bondings.

Section snippets

Computational procedures

All computations were performed by means of a non-relativistic first principles molecular orbital (MO) method using model clusters. The computer code named SCAT[11] is a modified version of an original discrete variational (DV)-Xα program12, 13. MO were constructed by linear combination of atomic orbitals (AO) asφl(rk)=iCilχi(rk)where χi (rk) denotes the AO, and rk is one of the sampling points in the DV calculation.

The overlap population between ith AO and jth AO at the lth MO is given byQlij

Interfacial bond-length and geometry in MgO/V system

In order to discuss the interfacial bondings, modification of both ionic and covalent bondings due to the presence of the interface should be quantitatively discussed. For this purpose, we made Mulliken’s population analyses[14] to evaluate both net charge and bond overlap population (BOP) around the interface. Charge transfer around the interface brings about the classical image forces. Stoneham et al.15, 16, 17 pointed out that the image interactions play a major role in determining the

Conclusion

First principles calculations for MgO(001)//M(001) interfaces (M=Sc–Cu) have been systematically made using model clusters composed of 27 atoms with special interests on the modification of chemical bondings by the interface. Detailed analyses of electronic structure are made for M=V using a larger cluster composed of 88 atoms. Major results can be summarized as follows:

  • 1.

    In the MgO/V system, charge transfer due to the formation of the interface is not significant except for the case that the dV–O

Acknowledgements

This work was supported by Grant-in-Aid for General Scientific Research from Ministry of Education, Sports, Science and Culture of Japan. We thank Y. Ikuhara for drawing out attention to this problem and stimulating discussion.

References (21)

  • M. Florjancic et al.

    J. Phys. Colloq. (France)

    (1985)
  • Rühle, M., Evans, A. G., Ashby, M. F. and Hirth, J. P., in Metal–Ceramic Interfaces. Pergamon Press, Oxford,...
  • A. Trampert et al.

    Acta metall. mater.

    (1992)
  • Y. Ikuhara et al.

    Phil. Mag. A

    (1995)
  • J. Bruley et al.

    J. Mater. Res.

    (1994)
  • Y. Ikuhara et al.

    Interface Sci.

    (1997)
  • U. Schönberger et al.

    Acta metall. mater.

    (1992)
  • C. Li et al.

    Phys. Rev.

    (1993)
  • E. Heifets et al.

    J. Phys. Condens. Matter

    (1996)
  • M. Mizuno et al.

    Acta mater.

    (1998)
There are more references available in the full text version of this article.

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