Effect of pressure on the metal-insulator transition temperature in thiospinel CuIr2S4

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Abstract

Electrical resistance of the thiospinel CuIr2S4 has been measured to clarify the pressure dependence of the metal-insulator transition temperature TM-I. It is found that TM-I increases with increasing pressure with a rate of dTM-I/dp=2.8 K/kbar and the transition becomes less prominent at high pressure.

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1

Present address: Toshiba Corporation, Himeji 671-12, Hyogo, Japan.

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