Elsevier

Vacuum

Volume 45, Issue 8, August 1994, Pages 867-869
Vacuum

Structural and material properties of tungsten silicide formed at low temperature

https://doi.org/10.1016/0042-207X(94)90125-2Get rights and content

Abstract

A tungsten film is rf magnetron sputtered on silicon wafers and subsequently subjected to 30 min novel discharge treatment in argon atmosphere near the sputter threshold. Vacuum annealing in the temperature range 500–650°C for 30 min is found to develop WSi2 with a sheet resistance of 6 ω Sq−1. Both the temperature range used and the sheet resistance obtained are lower than those reported by others. The surface morphology is observed to be smooth and the end phase is tetragonal tungsten silicide.

References (19)

  • DJ Silversmith et al.

    Thin Solid Films

    (1982)
  • J Lajzerowicz et al.

    Thin Solid Films

    (1986)
  • BY Tsaur et al.

    Thin Solid Films

    (1983)
  • A Singh

    Microelectron Reliab

    (1983)
  • A Singh et al.

    Microelectron J.

    (1989)
  • SP Murarka

    Silicides for VLSI Applications

    (1983)
  • BL Crowder et al.

    IEEE Trans Electron Devices

    (1979)
  • F Mohammadi et al.

    J Electrochem Soc

    (1980)
  • MA Nicolet et al.
There are more references available in the full text version of this article.

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