Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates

doi:10.1016/0040-6090(93)90089-8

Thin Solid Films

Volume 233, Issues 1–2, 12 October 1993, Pages 199-202

https://doi.org/10.1016/0040-6090(93)90089-8 Get rights and content

Abstract

In this study, the ion implantation of silicon (100) substrates with ²⁸Si⁺ ions is characterised using spectroscopic ellipsometry (SE), modulated optical reflectance (MOR) and Rutherford backscattering spectroscopy (RBS). Samples were implanted with ion energies of 2 MeV, 1 MeV and 200 keV to create a series of deep-level and surface-damaged layers. The implantation dose was varied from 3.4 × 10¹⁴ ions cm⁻² to 1.5 × 10¹⁶ ions cm⁻². All ion implantations were performed at room temperature. It was observed that the amplitudes and positions of the E₁ and E₂ silicon peaks are sensitive indicators of the degree of crystallinity of the silicon substrate. Monitoring of these parameters may provide a rapid route for water mapping of ion-implantation uniformity. The SE oscillations observed below 2.3 eV reflect the depth of the ion-implanted damage layer. In addition, analysis of the complete spectroscopic data yields damage profiles consistent with both measured and calculated RBS and TRIM ion-implantation moments.

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Fluence (Φ) dependence of interband critical points (CPs) can help to monitor the variation of band structure in crystalline–amorphous (c–a) silicon interfaces under ion implantation. Silicon wafers 〈1 0 0〉 were implanted in the range of 200–900 keV with Si, Ar, Kr and Xe ions with different fluences. The techniques used and the damage profiles have been demonstrated elsewhere [1]. Real and imaginary parts of the dielectric constant were calculated from the recently measured ellipsometric parameters (phase difference Δ and amplitude ratio Ψ) [1], [2]. The observed structures are analyzed by fitting the second-derivative spectra for complete line shape for both real and imaginary parts of the dielectric function d²ε/dω² with analytic critical point line shapes. The interband critical point parameters (strength, threshold energy, broadening and excitonic phase angle) have been considered. The variations of these parameters were used to monitor crystalline–amorphous transformation. Obtained results of unimplanted crystals were in fair agreement with previously published data [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13].
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Damage created by ion implantation of 150 keV Ne⁺ and 800 keV Ar⁺ ions in single-crystalline silicon was characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. Results from both methods unambiguously show the presence of a heavily damaged thin layer at the surface that is not predicted by TRIM calculations. The amorphization rate at the surface was found to be proportional to the nuclear energy deposition at the surface. It is demonstrated that SE cross-checked with RBS could be used for quantitative and accurate evaluation of the thickness of the damaged surface layer. The formation of this thin amorphous layer could be attributed to the redistribution of Si interstitials produced by the implantation process from the buried damaged region towards the surface and to a subsequent segregation process (W. Fukarek et al., Nucl. Instr. and Meth. B 127/128 (1997) 879).
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Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile
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Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates

Abstract

Nucl. Inst. Meth.

Nucl. Inst. Meth.

Nucl. Inst. Meth.

Appl. Surf. Sci.

Appl. Surf. Sci.

Surf. Sci.

Nucl. Instr. Meth.