Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates
References (15)
- et al.
Nucl. Inst. Meth.
(1991) - et al.
Nucl. Inst. Meth.
(1991) - et al.
Nucl. Inst. Meth.
(1991) - et al.
Appl. Surf. Sci.
(1992) - et al.
Appl. Surf. Sci.
(1993) - et al.
Surf. Sci.
(1983) - et al.
Nucl. Instr. Meth.
(1980)
There are more references available in the full text version of this article.
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