Experimental studies of ionization processes in sputtering of GaAs
References (11)
- et al.
Nucl. Instrum. Meth. Phys. Res. B
(1986) - et al.
Surf. Sci.
(1994) - et al.
Energy dependence of the yields of ion-induced sputtering of monatomic solids
J. Appl. Phys.
(1966)Appl. Phys. Lett.
(1983)Appl. Phys. Lett.
(1984)Spectrochim. Acta B
(1989)
There are more references available in the full text version of this article.
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