Leakage currents of n+p silicon diodes with different amounts of dislocations

doi:10.1016/0038-1101(69)90017-3

Solid-State Electronics

Volume 12, Issue 12, December 1969, Pages 963-964, IN3-IN4, 965-968

https://doi.org/10.1016/0038-1101(69)90017-3 Get rights and content

Abstract

Leakage currents in n⁺p silicon planar-diodes appeared to be related to the presence of dislocations, revealed by an X-ray topographic technique, in and near the n⁺ regions. Electrical measurements revealed a dominant bulk recombination—generation level, 0·055 eV. below the middle of the energy gap, and with $τ_{p0} τ_{n0} >1$ . This latter fact indicates a donor type defect. Surface recombination-generation currents were minimized by using a MOS type guard ring.

Résumé

Une corrélation est apparue entre les courants de fuite des diodes planaires n⁺p au silicium et la présence de dislocations dans et au voisinage de la région n⁺. Les dislocations ont été mises en évidence par une technique topographique aux R.X. Des measures électriques ont permis de déceler un niveau recombination-génération à 0,055 eV dessous du milieu de la bande, interdite, avec $τ_{p0} τ_{n0} >1$ . Ce dernier rapport nous montre que le niveau est du type donneur. Un anneau de garde type MOS nous a permis de minimiser les courants de recombination-génération de surface.

Zusammenfassung

Mittles einer Technik, die auf der Beugung von Röntgenstrahlen beruht, wurden Anweisungen dafür erhalten, dass zwischen den Leckströmen planaren n⁺ Dioden und dem Auftreten von Versetzungen in der Umgebung der n⁺ Gebiete Beziehungen bestehen. Electrische Messungen erwiesen das Bestehen eines dominanten Rekombination-Paarzeugnisniveaus 0,055 eV unter der Mitte des verbotenen Energiebandes, mit dem Verhältnis $τ_{p0} τ_{n0} >1$ . Der Wert dieses Verhältnisisses weist auf das Entstehen von Donatoren hin. Oberflächenrekombination und Paarbildung wurden weitzehend unterdrückt mittels eines MOS-artigen Abschirmring.

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Leakage currents of n+p silicon diodes with different amounts of dislocations

Abstract

Résumé

Zusammenfassung

Solid-St. Electron.

Solid-St. Electron.

J. appl. Phys.

Acta Crystallogr.

J. appl. Phys.

Proc. IEEE

Phys. Rev.

J. appl. Phys.

Leakage currents of n⁺p silicon diodes with different amounts of dislocations