New paramagnetic states in amorphous silicon and germanium

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Abstract

New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 1017 cm−3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.

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