The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy

https://doi.org/10.1016/0022-0248(95)80288-NGet rights and content

Abstract

We report the use of diethylsulphide for the n-type doping of GaAs, AlGaAs and InGaAs in chemical beam epitaxy (CBE). The incorporation efficiency of sulphur was found to be similar in GaAs and InGaAs but somewhat higher in AlGaAs, although sulphur demonstrated reduced electrical activation in AlGaAs. The incorporation of sulphur in GaAs was found to be independent of temperature in the range 400–600°C but dependent on V:III ratio. Incorporation in AlGaAs showed a small variation with temperature and a complex variation with alloy fraction while incorporation in InGaAs was not affected by alloy fraction.

References (14)

  • W.T. Tsang

    J. Crystal Growth

    (1990)
  • P.J. Skevington et al.

    J. Crystal Growth

    (1990)
  • P.A. Lane et al.

    J. Crystal Growth

    (1992)
  • Y.M. Houng et al.

    J. Crystal Growth

    (1986)
  • T.B. Joyce et al.

    J. Crystal Growth

    (1994)
  • T.L. Pfeffer et al.

    J. Crystal Growth

    (1995)
  • T.B. Joyce

    J. Crystal Growth

    (1990)
There are more references available in the full text version of this article.

Cited by (0)

View full text