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Simulation study of BESIII with stitched CMOS pixel detector using acts

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Abstract

The reconstruction of the tracks of charged particles with high precision is crucial for HEP experiments to achieve their physics goals. The BESIII drift chamber, which is used as the tracking detector of the BESIII experiment, has suffered from aging effects resulting in degraded tracking performance after operation for approximately 15 years. To preserve and enhance the tracking performance of BESIII, one of the proposals is to add one layer of a thin cylindrical CMOS pixel sensor based on state-of-the-art stitching technology between the beam pipe and the drift chamber. The improvement in the tracking performance of BESIII with such an additional pixel detector compared to that with only the existing drift chamber was studied using the modern common tracking software acts, which provides a set of detector-agnostic and highly performant tracking algorithms that have demonstrated promising performance for a few high-energy physics and nuclear physics experiments.

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Data availability

The data that support the findings of this study are openly available in Science Data Bank at https://www.doi.org/10.57760/sciencedb.13616 and https://cstr.cn/31253.11.sciencedb.13616.

Notes

  1. Suppose the wire has a direction of \(\textbf{w}\) and the track direction is \(\textbf{t}\) in the global coordinate frame, the x axis and y axis in the local coordinate frame of a line surface is \(\textbf{w} \times \textbf{t}\) and \(\textbf{w}\), respectively.

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Authors and Affiliations

  1. School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China

    Yi Liu & Xiao-Cong Ai

  2. School of Physics, Nanjing University, Nanjing, 210093, China

    Guang-Yan Xiao & Lei Zhang

  3. School of Physics, Nankai University, Tianjin, 300071, China

    Ya-Xuan Li & Ming-Gang Zhao

  4. Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing, 100049, China

    Ling-Hui Wu, Liang-Liang Wang, Ming-Yi Dong, Yao Zhang & Yang Zhou

  5. Research Center for Particle Science and Technology, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, China

    Jia-Ning Dong, Qing-Lin Geng, Yan Niu, An-Qing Wang, Meng Wang & Liang Zhang

  6. University of Chinese Academy of Sciences, 19A Yuquan Road, Shijingshan District, Beijing, 100049, China

    Ming-Yi Dong

  7. School of Information Science and Engineering, Harbin Institute of Technology, Weihai, 264209, China

    Min Luo, Chen-Xu Wang & Rui-Kai Zhang

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  1. Yi Liu
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  20. Yang Zhou
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Contributions

All authors contributed to the study conception and design and material preparation. The analysis was performed by Yi Liu, Guang-Yan Xiao and Ya-Xuan Li. The first draft of the manuscript was written by Xiao-Cong Ai and Ling-Hui Wu, and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

Corresponding author

Correspondence to Xiao-Cong Ai.

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Conflict of interest

The authors declare that they have no competing interests.

Additional information

This work was supported by the National Natural Science Foundation of China (Nos. U2032203, 12275296, 12275297, 12075142, 12175256, 12035009) and National Key R &D Program of China (No. 2020YFA0406302).

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Liu, Y., Ai, XC., Xiao, GY. et al. Simulation study of BESIII with stitched CMOS pixel detector using acts. NUCL SCI TECH 34, 203 (2023). https://doi.org/10.1007/s41365-023-01353-6

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