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Self-powered photodetectors based on CsPbBr3 quantum dots/organic semiconductors/SnO2 heterojunction for weak light detection

基于CsPbBr3量子点/有机半导体/SnO2异质结的自供 电型探测器用于弱光检测

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Abstract

All-inorganic lead halide perovskite quantum dots (QDs) show great potential in the development of photodetectors (PDs) due to their excellent photoelectric properties. However, the photoresponse performance of the pure perovskite QDs-based PDs is usually limited by the poor charge transport efficiency of the perovskite QDs films. Here, high-performance self-powered PDs based on perovskite QDs and organic semiconductor PQT-12 (poly(3,3‴-didodecyl quarterthiophene)) are reported. Even in a self-powered mode, the devices can still show stable photoresponse to light signals and achieve excellent photodetection performance, including a detectivity up to 5.8 × 1012 Jones, and Ilight/Idark ratio up to 105. More importantly, the devices exhibit obvious photoresponse to weak light with intensity as low as 3 nW cm−2. To the best of our knowledge, the weak light detection ability of the device is better than most reported PDs based on perovskite QDs. In addition, the devices can be fabricated into flexible PDs with almost unchanged photocurrent under different bending angles. The overall performances of our devices are excellent among the reported self-powered PDs. This method utilized here provides new guides for developing high-performance self-powered PDs based on perovskite QDs for weak light detection.

摘要

全无机卤化铅钙钛矿量子点由于其优异的光电性能在光电探测 器的发展中展示出巨大的潜力. 然而, 基于纯钙钛矿量子点的光电探测 器光响应性能通常受到钙钛矿量子点薄膜电荷传输效率差的限制. 本 工作报道了基于钙钛矿量子点和有机半导体PQT-12(聚3,3′′′-二十二烷 基四噻吩)的高性能自供电光电探测器. 即使在自供电模式下, 该器件 仍然可以对光信号展示出稳定的光响应性质, 并实现了优异的光探测 性能, 包括5.8 × 1012 Jones的探测率和高达105的光暗电流比. 更重要的 是, 器件对于强度低至3 nW cm−2的弱光具有明显的光响应. 据我们所 知, 该器件的自供电弱光探测能力优于大多数报道的基于钙钛矿量子 点的光电探测器. 此外, 器件还可以制备成柔性探测器, 在不同的弯曲 角度下器件的光电流几乎保持不变. 相比于已报道的自供电光电探测 器, 我们的器件综合性能十分优异. 本工作可以为基于钙钛矿量子点开 发高性能弱光探测自供电光电探测器提供借鉴.

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Acknowledgements

This work was supported by the Science and Technology Foundation of Shanghai (19JC1412402 and 20JC1415600), the National Natural Science Foundation of China (62074111), Shanghai Municipal Science and Technology Major Project (2021SHZDZX0100), Shanghai Municipal Commission of Science and Technology Project (19511132101), and the support of the Fundamental Research Funds for the Central Universities. The authors are also thankful for the support from the Measurements and Analysis Center, School of Materials Science and Engineering, Tongji University.

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Authors and Affiliations

  1. Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai, 201804, China

    Ben Yang  (杨奔), Pu Guo  (郭璞), Dandan Hao  (郝丹丹), Yan Wang  (王言), Li Li  (李立), Shilei Dai  (代世磊) & Jia Huang  (黄佳)

  2. Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People’s Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, China

    Jia Huang  (黄佳)

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  1. Ben Yang  (杨奔)
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  2. Pu Guo  (郭璞)
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  4. Yan Wang  (王言)
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  5. Li Li  (李立)
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  6. Shilei Dai  (代世磊)
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  7. Jia Huang  (黄佳)
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Contributions

Yang B and Huang J designed the project. Yang B fabricated the device and wrote the first draft. Yang B, Guo P, and Li L carried out most measurements and characterizations. Wang Y, Hao D, and Dai S helped with writing and revision. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Shilei Dai  (代世磊) or Jia Huang  (黄佳).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Supporting data are available in the online version of the paper.

Ben Yang received his bachelor’s degree (2017) from Chang’an University and his PhD degree in materials science and engineering from Tongji University, China. His current research interest mainly focuses on photo-responsive devices based on organic semiconductors and perovskite materials.

Shilei Dai received his BE degree in polymer science and engineering from Sichuan University, and his PhD degree in materials science and engineering from Tongji University. His research interests include deformable and biocompatible electronics, bio-inspired in-memory and insensor computing devices.

Jia Huang is a professor of materials science and engineering at Tongji University. He received his BSc degree in materials science and engineering from the University of Science and Technology of China, his MSc degree in applied science from the College of William & Mary, USA, and his PhD degree in materials science and engineering from Johns Hopkins University, USA. Currently Dr. Jia Huang’s research focuses on organic semiconductors, flexible electronics, sensors, thin-film transistors, and organic neuromorphic devices.

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40843_2022_2155_MOESM1_ESM.pdf

Self-powered photodetectors based on CsPbBr3 quantum dots/organic semiconductors/SnO2 heterojunction for weak light detection

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Yang, B., Guo, P., Hao, D. et al. Self-powered photodetectors based on CsPbBr3 quantum dots/organic semiconductors/SnO2 heterojunction for weak light detection. Sci. China Mater. 66, 716–723 (2023). https://doi.org/10.1007/s40843-022-2155-0

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