Abstract
Memristors integrated with low operating voltage, good stability, and environmental benignity play an important role in data storage and logical circuit technology, but their fabrication still faces challenges. This study reports an ultra-thin bio-memristor based on pristine environment-friendly silk nanofibrils (SNFs). The intrinsic ionic conductivity, combined with high dielectric performance and nanoscale thickness, lowers the operation voltage down to 0.1–0.2 V, and enables stable switching and retention time over 180 times and 105 s, respectively. Furthermore, the SNF-based memristor device in a crossbar array achieves stable memristive performance, and thus realizes the functions of memorizing image and logic operation. By carrying out variable-temperature electrical experiments and Kelvin probe force microscopy, the space charge-limited conduction mechanism is revealed. Integrating with low operating voltage, good stability, and ultra-thin thickness makes the SNF-based memristors excellent candidates in bioelectronics.
摘要
兼具低工作电压、良好稳定性及环境友好性的忆阻器在数据存储和逻辑电路领域具有重要的作用, 但其制备依然是一个较大的挑战. 本研究报告了一种基于纯丝素纳米微纤(SNFs)的超薄生物忆阻器. 丝素纳米微纤的本征离子导电性、高介电性能及纳米级的厚度, 可将忆阻器的工作电压降低至0.1–0.2 V, 并使其实现了超过180次的稳定电阻切换及105 s的阻态保持时间. 此外, 基于SNFs的忆阻交叉阵列具备稳定的忆阻性能, 实现了图像记忆和逻辑运算功能. 电学变温实验和开尔文探针力显微镜的测试结果表明, 忆阻器的工作机制为空间电荷限制传导(SCLC)机制. SNFs基忆阻器的低工作电压、良好的稳定性和超薄厚度有望使其成为理想的生物电子器件.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (51903045 and 52173031), the International Cooperation Fund of the Science and Technology Commission of Shanghai Municipality (19520744500), the Basic Research Project of the Science and Technology Commission of Shanghai Municipality (21JC1400100), Shanghai Rising-Star Program (22QA1400400), the Program of Shanghai Academic/Technology Research Leader (20XD1400100), the Fundamental Research Funds for the Central Universities and Graduate Student Innovation Fund of Donghua University (CUSF-DH-D-2020049). We thank Dr. Renwei Liu (Shimadzu) for the help in AFM, KPFM and XPS characterizations.
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Zhang YP and Fan S conceived and directed this research; Zhang Y performed the experiments, analyzed the data, and wrote the manuscript; Niu Q provided the method for preparing nanofibrils; Han F measured and analyzed the memorizing image and logic operation properties. All the authors contributed to the preparation of the manuscript.
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The authors declare that they have no conflict of interest.
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Supporting data are available in the online version of the paper.
Yi Zhang received her BSc degree in materials science and engineering in 2015 from Lanzhou University of Technology. She is currently a PhD candidate at Donghua University (DHU). Her research mainly focuses on biomemristors based on silk fibroin.
Suna Fan is an associate professor at the College of Materials Science and Engineering, DHU, China. She received her PhD degree in materials physics and chemistry from Jilin University, China, in 2017. From 2017 to 2018, she was an assistant professor at Wenzhou Institute of Biomaterials and Engineering, Chinese Academy of Sciences (CAS) (renamed as Wenzhou Institute, University of CAS in 2019). She joined DHU in 2018 and is working on the research of silk-based smart materials and conducting polymers.
Yaopeng Zhang is a professor at the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, DHU, China. He received his PhD degree in materials science from DHU in 2002. From 2004 to 2007, he was a postdoctoral research fellow at the Kawamura Institute of Chemical Research, Japan. He served as a visiting scholar at Akita University, Japan and Stony Brook University, USA. His current research focuses on silk materials for biomedical and bioelectronic applications.
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Zhang, Y., Fan, S., Niu, Q. et al. Intrinsically ionic conductive nanofibrils for ultra-thin bio-memristor with low operating voltage. Sci. China Mater. 65, 3096–3104 (2022). https://doi.org/10.1007/s40843-022-2115-6
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DOI: https://doi.org/10.1007/s40843-022-2115-6