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On the Hysteresis Loop of Organic Memristive Device

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Abstract

Organic memristive device based on polyaniline emeraldine base–polyethylene oxide was fabricated. Cyclic voltage–current characteristics of the device, measured at different acquisition rate, revealed the transformation of the linear behavior at high scanning rate through the curves with the pronounced hysteresis loop at the middle rate values and finally to the characteristics, suitable for the utilization of the device in synapse-mimicking circuits.

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Acknowledgments

We acknowledge the financial support of the Future and Emerging Technologies (FET) program within the Seventh Framework Program for Research of the European Commission, under the FET-OPEN grant agreement BION, number 213219. Special thanks to Mr. Yuri Gunaza for his help in the preparation of figures.

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Authors and Affiliations

  1. Department of Physics, University of Parma, Viale Usberti 7A, Parma, 43100, Italy

    Konstantin Gorshkov & Tatiana Berzina

  2. CNR-IMEM, Parco Area delle Scienze 37/A, 43124, Parma, Italy

    Tatiana Berzina

  3. National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow, Russia, 124498

    Konstantin Gorshkov

Authors
  1. Konstantin Gorshkov
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  2. Tatiana Berzina
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Correspondence to Konstantin Gorshkov.

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Gorshkov, K., Berzina, T. On the Hysteresis Loop of Organic Memristive Device. BioNanoSci. 1, 198–201 (2011). https://doi.org/10.1007/s12668-011-0021-6

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  • DOI: https://doi.org/10.1007/s12668-011-0021-6

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