Abstract
Flash spark plasma sintering (FSPS) of SiC was carried out using additives (10 vol%) with different electrical conductivities: alumina (insulator), boron carbide (semiconductor), and titanium carbide metallic (conductor). The electrical conductivity of the additives plays a determinant role on the FSPS process, it controls the electrical SPS power dissipation, the development of gaseous/liquids/solid phases and time needed to complete densification. The microstructure of FSPSed SiC samples confirmed localized heating in the case of Al2O3 additive, resulting in undesired carbothermal reduction and formation of gaseous species. In the presence of TiC additive, solid state sintering led to SiC sublimation without achieving a complete densification. The presence of B4C as an additive led to a liquid phase formation, which promoted sintering contributing and the densification of the samples. The present study rationalizes the selection FSPS sintering additives based on their electrical and chemical compatibility with the SiC matrix.
Data Availability
The datasets generated during and/or analysed during the current study are available on request from the corresponding author.
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Writing- original draft preparation and analysis: [Dr. Sandan Kumar Sharma]
Experimental Methodology: [Dr. Martin Fides]
Conceptualization and corrections: [Dr. Pavol Hvizdoš],
Conceptualization and corrections in draft: [Dr. Michael J. Reece];
Conceptualization and experimental: [Dr. Salvatore Grasso]
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Sharma, S.K., Fides, M., Hvizdoš, P. et al. Flash Spark Plasma Sintering of SiC: Impact of Additives. Silicon 14, 7377–7382 (2022). https://doi.org/10.1007/s12633-021-01407-7
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DOI: https://doi.org/10.1007/s12633-021-01407-7