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InAsSb thick epilayers applied to long wavelength photoconductors

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Abstract

InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy (ME). Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2–10 μm. The peak detectivity D *λp reached 5.4 × 109 cm·Hz1/2·W−1 for the immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm·Hz1/2·W−1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.

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References

  1. G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W.L. Sarney, and S.P. Svensson, Properties of unrelaxed InAs1−x Sbx alloys grown on compositionally graded buffers, Appl. Phys. Lett., 99(2011), No. 14, art. No. 141116.

    Google Scholar 

  2. D. Lackner, M. Steger, M.L.W. Thewalt, O.J. Pitts, Y.T. Cherng, S.P. Watkins, E. Plis, and S. Krishna, InAs/InAsSb strain balanced superlattices for optical detectors: material properties and energy band simulations, J. Appl. Phys., 111(2012), No. 3, art. No. 034507.

    Google Scholar 

  3. A. Kumar and P.S. Dutta, Growth of long wavelength InxGa1−x AsySb1−y layers on GaAs from liquid phase, Appl. Phys. Lett., 89(2006), No. 16, art. No. 162101.

    Google Scholar 

  4. J.I. Chyi, S. Kalem, N.S. Kumar, C.W. Litton, and H. Morkoc, Growth of InSb and InAs1−x Sbx on GaAs by molecular beam epitaxy, Appl. Phys. Lett., 53(1988), No. 12, p. 1092.

    Article  CAS  Google Scholar 

  5. J.D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi, Long wavelength InAsSb photoconductors operated at near room temperatures (200–300 K), Appl. Phys. Lett., 68(1996), No. 1, p. 99.

    Article  CAS  Google Scholar 

  6. V.K. Dixit, B. Bansal, V. Venkataraman, H.L. Bhat, K.S. Chandrasekharan, and B.M. Arora, Studies on high resolution X-ray diffraction, optical and transport properties of InAsxSb1−x /GaAs (x ≤ 0.06) heterostructure grown using liquid phase epitaxy, J. Appl. Phys., 96(2004), No. 9, p. 4989.

    Article  CAS  Google Scholar 

  7. Y.Z. Gao, X.Y. Gong, H. Kan, M. Aoyama, and T. Yamaguchi, InAs1−y Sby single crystals with cutoff wavelength of 8–12 μm grown by a new method, Jpn. J. Appl. Phys., 38(1999), No. 4, p. 1939.

    Article  CAS  Google Scholar 

  8. Y.Z. Gao, H. Kan, F.S. Gao, X.Y. Gong, and T. Yamaguchi, Improved purity of long wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats, J. Cryst. Growth, 234(2002), No. 1, p. 85.

    Article  CAS  Google Scholar 

  9. Y. Gao, H. Kan, and T. Yamaguchi, Improvement of low temperature mobility of InAs0.04Sb0.96 epilayers with cut off wavelength of 12.5 μm by annealing, Cryst. Res. Technol., 35(2000), No. 8, p. 943.

    Article  CAS  Google Scholar 

  10. Y.Z. Gao, H. Kan, M. Aoyama, and T. Yamaguchi, Germanium- and zinc-doped p-type InAsSb single crystals with a cutoff wavelength of 12.5 μm, Jpn. J. Appl. Phys., 39(2000), No. 5, p. 2520.

    Article  CAS  Google Scholar 

  11. Y.Z. Gao, X.Y. Gong, and T. Yamaguchi, Optical properties of InAsSb single crystals with cutoff wavelengths of 8–12 μm grown by melt-epitaxy, Jpn. J. Appl. Phys., 45(2006), No. 7, p. 5732.

    Article  CAS  Google Scholar 

  12. K. Postava, Y.Z. Gao, X.Y. Gong, L. Halagacka, J. Pištora, A. Nakaoka, and T. Yamaguchi, Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy, Phys. Status Solidi C, 5(2008), No. 5, p. 1316.

    Article  CAS  Google Scholar 

  13. H.H. Wieder and A.R. Clawson, Photo-electronic properties of InAs0.07Sb0.93 films, Thin Solid Films, 15(1973), No. 2, p. 217.

    Article  CAS  Google Scholar 

  14. E.H. Steenbergen, Y. Huang, J.H. Ryou, L. Ouyang, J.J. Li, D.J. Smith, R.D. Dupuis, and Y.H. Zhang, Structural and optical characterization of type-II InAs/InAs1−x Sbx superlattices grown by metalorganic chemical vapor deposition, Appl. Phys. Lett., 99(2011), No. 7, art. No. 071111.

    Google Scholar 

  15. J. Piotrowski and A. Rogalski, Uncooled long wavelength infrared photon detectors, Infrared Phys. Technol., 46(2004), p. 115.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. School of Electronics and Information Engineering, Tongji University, Shanghai, 201804, China

    Yu-zhu Gao & Xiu-ying Gong

  2. Huaxing Infrared Device Co., Xi’an, 712099, China

    Guang-hui Wu & Yan-bin Feng

  3. Hamamatsu Photonics K.K., Shizuoka, 434-8601, Japan

    Takamitsu Makino & Hirofumi Kan

  4. Research Institute of Electronics, Shizuoka University, Shizuoka, 432-8011, Japan

    Tadanobu Koyama & Yasuhiro Hayakawa

Authors
  1. Yu-zhu Gao
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  2. Xiu-ying Gong
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  3. Guang-hui Wu
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  4. Yan-bin Feng
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  5. Takamitsu Makino
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  6. Hirofumi Kan
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  7. Tadanobu Koyama
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  8. Yasuhiro Hayakawa
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Correspondence to Yu-zhu Gao.

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Gao, Yz., Gong, Xy., Wu, Gh. et al. InAsSb thick epilayers applied to long wavelength photoconductors. Int J Miner Metall Mater 20, 393–396 (2013). https://doi.org/10.1007/s12613-013-0741-4

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  • DOI: https://doi.org/10.1007/s12613-013-0741-4

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