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Enhanced compactness and element distribution uniformity of Cu2ZnSnS4 thin film by increasing precursor S content

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Abstract

Cu2ZnSnS4 thin films were prepared by co-sputtering with Cu (or Cu2S), ZnS and SnS2 targets in this study. S amount in the precursor of Cu2ZnSnS4 thin film was verified by using Cu or Cu2S target. The effect of S amount in the precursor on the microstructure and element distribution of Cu2ZnSnS4 thin film was discussed. It was found that S content is sufficient in the precursor thin film using Cu2S instead of Cu target. The microstructure, composition homogeneity, and secondary phase formation of the Cu2ZnSnS4 thin film are seriously affected by S amount in the precursor thin film. Namely, sufficient S can improve the crystallization and orientation of the precursor thin film and enhance the compactness as well as composition homogeneity of the Cu2ZnSnS4 thin film after sulfurization. Moreover, the secondary phase formation in Cu2ZnSnS4 thin film can be greatly inhibited by increasing S content in the precursor thin film.

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Acknowledgments

This study was financially supported by the Foundation of Special Scientific Research Institutes (No. 2013EG115002), and the Innovation Foundation of General Research Institute for Nonferrous Metals (No. 52215).

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Authors and Affiliations

  1. Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing, 100088, China

    Hao Han, Ji-Ning Wang, Jing Mi, Xiao-Peng Liu & Li-Jun Jiang

  2. Beijing Engineering Research Center of Nonferrous Metal Products for New Energy, Beijing, 100088, China

    Hao Han, Ji-Ning Wang, Jing Mi, Xiao-Peng Liu & Li-Jun Jiang

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  1. Hao Han
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  2. Ji-Ning Wang
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Correspondence to Ji-Ning Wang.

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Han, H., Wang, JN., Mi, J. et al. Enhanced compactness and element distribution uniformity of Cu2ZnSnS4 thin film by increasing precursor S content. Rare Met. 39, 256–261 (2020). https://doi.org/10.1007/s12598-016-0794-4

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  • DOI: https://doi.org/10.1007/s12598-016-0794-4

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