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Polymer nanowire vertical transistors

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Abstract

By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.

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Authors and Affiliations

  1. Department of Physics and Center for Nano-Technology, Chung Yuan Christian University, Chung-Li, 32023, Taiwan

    Husande Li, Tzushan Chen & Yuchiang Chao

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  1. Husande Li
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  2. Tzushan Chen
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  3. Yuchiang Chao
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Correspondence to Yuchiang Chao.

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Li, H., Chen, T. & Chao, Y. Polymer nanowire vertical transistors. Nano Res. 7, 938–944 (2014). https://doi.org/10.1007/s12274-014-0458-3

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  • DOI: https://doi.org/10.1007/s12274-014-0458-3

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