Abstract
GaN films grown by electron-cyclotron resonance plasma-assisted molecular beam epitaxy were studied by transmission electron microscopy and x-ray diffraction (XRD). Two sets of films were compared that were grown under identical conditions except for the ratio of the Ga to N flux. Films with a 30% higher Ga to N ratio (A films) were found to contain inversion domains (IDs). No IDs were found in films grown with a lower Ga to N ratio (B films), but instead the zinc-blende GaN was found near the film substrate interface. A narrower XRD rocking curve width along the (0002) direction and a broader rocking curve width along the asymmetric (1102) axis were found for A films compared to B films.
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Romano, L.T., Krusor, B.S., Singh, R. et al. Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire. J. Electron. Mater. 26, 285–289 (1997). https://doi.org/10.1007/s11664-997-0165-x
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DOI: https://doi.org/10.1007/s11664-997-0165-x