Abstract
Quantum dot-perovskite solar cells have garnered significant attention within the photovoltaic community over the past decade. In this report, we study the performance of a PbS quantum dot solid layer treated with a CH3NH3PbI3 perovskite absorber. A self-consistent device model with an unprecedented architecture (ITO/ETL(TiO2)/CH3NH3PbI3/PbS TBAI) was developed, and a rigorous numerical analysis was performed to optimize the performance of the device. The effect of several device parameters including absorber layer thickness, quantum dot layer thickness, doping concentration, defect density, and interface defect density on the performance of the developed device model was studied. Finally, the effect of gradient doping on the performance of the device was studied. With the optimized parameters, we obtained a power conversion efficiency (PCE) of 26.05% which is considerably better than that reported in previous studies.
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The solar cell capacitor simulator (SCAPS-1D) software utilized in this simulation was provided by Marc Burgelman at the University of Gent, Belgium.
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Mukherjee, I., Somay, S. & Pandey, S.K. Comprehensive Device Modeling and Performance Analysis of Quantum Dot-Perovskite Solar Cells. J. Electron. Mater. 51, 1524–1532 (2022). https://doi.org/10.1007/s11664-021-09409-2
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DOI: https://doi.org/10.1007/s11664-021-09409-2