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Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

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Abstract

Sulfurization with sulfur vapor has been demonstrated to be useful for fabricating sputtered-multilayer MoS2 films with an approximately 4-nm thickness. With this process, sulfur vacancies in the sputtered MoS2 films were remarkably compensated, and MoO3 was simultaneously sulfurized. Eventually, carrier densities of the sulfurized MoS2 films were successfully reduced to 1.8 × 1016 cm−3 and electron mobilities were considerably enhanced to 25.2 cm2/V-s.

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Acknowledgements

This work was partly supported by JST CREST, grant nos. JPMJCR16F4, JST COI and JSPS KAKENHI grant no. 26105014.

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Authors and Affiliations

  1. Tokyo Institute of Technology, Yokohama, 226-8502, Kanagawa, Japan

    Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui & Hitoshi Wakabayashi

  2. Meiji University, Kawasaki, 214-5871, Kanagawa, Japan

    Seiya Ishihara & Atsushi Ogura

Authors
  1. Kentaro Matsuura
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  2. Takumi Ohashi
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  3. Iriya Muneta
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  4. Seiya Ishihara
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  6. Kazuo Tsutsui
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  7. Atsushi Ogura
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  8. Hitoshi Wakabayashi
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Correspondence to Kentaro Matsuura.

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Matsuura, K., Ohashi, T., Muneta, I. et al. Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization. J. Electron. Mater. 47, 3497–3501 (2018). https://doi.org/10.1007/s11664-018-6191-z

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  • DOI: https://doi.org/10.1007/s11664-018-6191-z

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