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Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes

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Abstract

We present an x-ray micro-diffraction investigation of localized strain and lattice disorientation in HgCdTe layers with a submicronic resolution using a synchrotron white beam in Laue configuration. Diffraction peak displacement mapping evidences bending of the crystal planes around mesa-etched photodiodes, with strong dependence upon the processing steps. The etching step by itself does not induce any deformation within the layer, while the passivation step leads to sufficient strain for plastic deformation to occur at the lateral edges of the etching. The annealing step is found to have a healing effect on the layer, which reduces the overall deformation and even re-crystallizes plastically deformed areas of the layer.

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Authors and Affiliations

  1. Univ. Grenoble Alpes, CEA, LETI, DOPT, LMP, 38000, Grenoble, France

    Aymeric Tuaz & Philippe Ballet

  2. Univ. Grenoble Alpes, CEA, INAC, MEM, 38000, Grenoble, France

    Xavier Biquard & François Rieutord

Authors
  1. Aymeric Tuaz
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  2. Philippe Ballet
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  3. Xavier Biquard
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  4. François Rieutord
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Correspondence to Aymeric Tuaz or Philippe Ballet.

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Tuaz, A., Ballet, P., Biquard, X. et al. Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes. J. Electron. Mater. 46, 5442–5447 (2017). https://doi.org/10.1007/s11664-017-5691-6

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  • DOI: https://doi.org/10.1007/s11664-017-5691-6

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